Methods to tune the electronic states of self-organized InAs/GaAs quantum dots
Wang H; Niu ZC; Zhu HJ; Wang ZM; Jiang DS; Feng SL; Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
2000
会议名称5th International Conference on the Electrical Transport and Optical Properties of Inhomogeneous Media (ETOPIM5)
会议录名称PHYSICA B-CONDENSED MATTER, 279 (1-3)
页码217-219
会议日期JUN 21-25, 1999
会议地点HONG KONG, HONG KONG
出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者ELSEVIER SCIENCE BV
ISSN0921-4526
部门归属chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要After capping InAs islands with a thin enough GaAs layer, growth interruption has been introduced. Ejected energy of self-organized InAs/GaAs quantum dots has been successfully tuned in a controlled manner by changing the thickness of GaAs capping layer and the time of growth interruption and InAs layer thickness. The photoluminescence (PL) spectra showing the shift of the peak position reveals the tuning of the electronic states of the QD system. Enhanced uniformity of Quantum dots is observed judging from the decrease of full width at half maximum of FL. Injection InAs/GaAs quantum dot lasers have been fabricated and performed on various frequencies. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
关键词Quantum Dot Growth Interruption Quantum Dot Laser
学科领域半导体物理
主办者Lee Hysan Fdn.; Croucher Fdn.; KC Wong Educ Fdn.; Schlumberger Doll Res.; ARO FE.; AFOSR AOARD.; ONRASIA.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/15007
专题中国科学院半导体研究所(2009年前)
通讯作者Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
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Wang H,Niu ZC,Zhu HJ,et al. Methods to tune the electronic states of self-organized InAs/GaAs quantum dots[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:217-219.
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