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Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 2, 页码: Art. No. 023104
Authors:  Zhang LQ;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Zhang SM;  Yang H;  Zhang LQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: lqzhang@semi.ac.cn;  hyang@red.semi.ac.cn
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Aluminium Compounds  Claddings  Gallium Compounds  Iii-v Semiconductors  Indium Compounds  Quantum Well Lasers  Refractive Index  Waveguide Lasers  
Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 卷号: 487, 期号: 1-2, 页码: 400-403
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Guo X;  Liu ZS;  Zhang SM;  Wang YT;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Nitride Materials  
NiO removal of Ni/Au Ohmic contact to p-GaN after annealing 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 2, 页码: 101-104
Authors:  Lin Mengzhe;  Cao Qing;  Yan Tingjing;  Zhang Shuming;  Chen Lianghui
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GaN-based violet laser diodes grown on free-standing GaN substrate 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 12, 页码: 5350-5353
Authors:  Zhang LQ;  Zhang SM;  Jiang DS;  Wang H;  Zhu JJ;  Zhao DG;  Liu ZS;  Yang H;  Yang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: lqzhang@semi.ac.cn;  hyang@red.semi.ac.cn
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Gan Laser Diode  Mounting Configuration  Active Region Temperature  Continuous-wave Operation  
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 2, 页码: Art. No. 026102
Authors:  Sun X;  Jiang DS;  Liu WB;  Zhu JH;  Wang H;  Liu ZS;  Zhu JJ;  Wang YT;  Zhao DG;  Zhang SM;  You LP;  Ma RM;  Yang H;  Sun X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: xiansun@semi.ac.cn;  dsjiang@red.semi.ac.cn
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Light-emitting-diodes  Fundamental-band Gap  Nanowires  Heterostructures  Nanostructures  Mocvd  Polar  
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4, 页码: Art. No. 041901
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Wang H;  Zhang SM;  Wang YT;  Yang H;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Edge Dislocations  Gallium Compounds  Iii-v Semiconductors  Impurities  Photoluminescence  Semiconductor Doping  Semiconductor Thin Films  Silicon  Wide Band Gap Semiconductors  X-ray Diffraction  
Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 1, 页码: Art. No. 015108
Authors:  Liu WB;  Zhao DG;  Sun X;  Zhang S;  Jiang DS;  Wang H;  Zhang SM;  Liu ZS;  Zhu JJ;  Wang YT;  Duan LH;  Yang H;  Liu WB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wbliu@semi.ac.cn;  dgzhao@red.semi.ac.cn
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Surface-morphology  Detectors  Growth  
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 14, 页码: Art. No. 145410
Authors:  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
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Molecular-beam Epitaxy  Phase Epitaxy  Quantum Dots  Band-gap  Growth  Surfaces  
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 5, 页码: Art. No. 055001
Authors:  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
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Molecular-beam Epitaxy  Electron-transport  Band-gap  Films  Sapphire  
Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 7, 页码: Art. No. 075004
Authors:  Wang H;  Wang LL;  Sun X;  Zhu JH;  Liu WB;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
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Electron-transport  Phase Epitaxy  Nitride Inn  Band-gap