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Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
Wang H; Jiang DS; Zhu JJ; Zhao DG; Liu ZS; Wang YT; Zhang SM; Yang H; Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
2009
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume42Issue:14Pages:Art. No. 145410
AbstractThis paper presents a study on the nucleation and initial growth kinetics of InN on GaN, especially their dependence on metalorganic chemical vapour deposition conditions. It is found that the density and size of separated InN nano-scale islands can be adjusted and well controlled by changing the V/III ratio and growth temperature. InN nuclei density increases for several orders of magnitude with decreasing growth temperature between 525 and 375 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters less than 100 nm, whereas at elevated temperatures the InN islands grow larger and become well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. The temperature dependence of InN island density gives two activation energies of InN nucleation behaviour, which is attributed to two different kinetic processes related to In adatom surface diffusion and desorption, respectively.
metadata_83[wang h.; jiang d. s.; zhu j. j.; zhao d. g.; liu z. s.; wang y. t.; zhang s. m.] chinese acad sci inst semicond state key lab integrated optoelect beijing 100083 peoples r china; [yang h.] chinese acad sci suzhou inst nanotech & nanobion suzhou 215123 peoples r china
KeywordMolecular-beam Epitaxy Phase Epitaxy Quantum Dots Band-gap Growth Surfaces
Subject Area光电子学
Funding OrganizationNational Natural Science Fund of China 60506001 6083600360776047National Basic Research Program This work was supported by the National Natural Science Fund of China (Grant Nos 60506001 60836003 and 60776047) and the National Basic Research Program (2007CB936700). The authors would like to thank the Beijing Synchrotron Radiation Facility (BSRF) for the assistance in thin film characterization.
Indexed BySCI
Language英语
Date Available2010-03-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/7097
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorWang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Recommended Citation
GB/T 7714
Wang H,Jiang DS,Zhu JJ,et al. Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(14):Art. No. 145410.
APA Wang H.,Jiang DS.,Zhu JJ.,Zhao DG.,Liu ZS.,...&Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn.(2009).Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(14),Art. No. 145410.
MLA Wang H,et al."Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.14(2009):Art. No. 145410.
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