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Fast and controllable fabrication of suspended graphene nanopore devices 期刊论文
NANOTECHNOLOGY, 2012, 卷号: 23, 期号: 8, 页码: 85301
Authors:  Liu, S;  Zhao, Q;  Xu, J;  Yan, K;  Peng, HL;  Yang, FH;  You, LP;  Yu, DP
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Size evolution and surface characterization of solid-state nanopores in different aqueous solutions 期刊论文
NANOSCALE, 2012, 卷号: 4, 期号: 5, 页码: 1572-1576
Authors:  Li, QT;  Zhao, Q;  Lu, B;  Zhang, HB;  Liu, S;  Tang, ZP;  Qu, LJ;  Zhu, R;  Zhang, JM;  You, LP;  Yang, FH;  Yu, DP
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Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 2, 页码: Art. No. 026102
Authors:  Sun X;  Jiang DS;  Liu WB;  Zhu JH;  Wang H;  Liu ZS;  Zhu JJ;  Wang YT;  Zhao DG;  Zhang SM;  You LP;  Ma RM;  Yang H;  Sun X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address:;
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Light-emitting-diodes  Fundamental-band Gap  Nanowires  Heterostructures  Nanostructures  Mocvd  Polar  
Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 卷号: 17, 期号: 43, 页码: L445-L449
Authors:  Dai L;  Liu SF;  You LP;  Zhang JC;  Qin GG;  Qin, GG, Peking Univ, Sch Phys, Beijing 100871, Peoples R China. 电子邮箱地址:
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Gallium Nitride Nanowires  
Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an in-doping technique 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 9, 页码: 4329-4333
Authors:  Liu, SF;  Qin, GG;  You, LP;  Zhang, JC;  Fu, ZX;  Dai, L;  Dai, L, Peking Univ, Sch Phys, Beijing 100871, Peoples R China. 电子邮箱地址:
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Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique 期刊论文
JOURNAL OF CHEMICAL PHYSICS, 2005, 卷号: 122, 期号: 10, 页码: Art.No.104713
Authors:  Dai L;  Liu SF;  Fu ZX;  You LP;  Zhu JJ;  Lin BX;  Zhang JC;  Qin GG;  Qin, GG, Peking Univ, Sch Phys, Beijing 100871, Peoples R China. 电子邮箱地址:
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Gallium Nitride Nanowires  
在双热舟化学气相沉积系统中通过掺In技术生长GaN纳米线和纳米锥 期刊论文
物理学报, 2005, 卷号: 54, 期号: 9, 页码: 4329-4333
Authors:  刘仕锋;  秦国刚;  尤力平;  张纪才;  傅竹西;  戴伦
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