SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods
Sun X; Jiang DS; Liu WB; Zhu JH; Wang H; Liu ZS; Zhu JJ; Wang YT; Zhao DG; Zhang SM; You LP; Ma RM; Yang H; Sun X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: xiansun@semi.ac.cn; dsjiang@red.semi.ac.cn
2009
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume106Issue:2Pages:Art. No. 026102
AbstractNanostructured hexagonal InN overlayers were heteroepitaxially deposited on vertically oriented c-axis GaN nanorods by metal-organic chemical vapor deposition. InN overlayers grown in radial directions are featured by a nonpolar heteroepitaxial growth mode on GaN nanorods, showing a great difference from the conventional InN growth on (0001) c-plane GaN template. The surface of InN overlayers is mainly composed of several specific facets with lower crystallographic indices. The orientation relationship between InN and GaN lattices is found to be [0001](InN) parallel to [0001](GaN) and [1100](InN)parallel to[1100](GaN). A strong photoluminescence of InN nanostructures is observed. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3177347]
metadata_83[sun xian; jiang desheng; liu wenbao; zhu jihong; wang hui; liu zongshun; zhu jianjun; wang yutian; zhao degang; zhang shuming; yang hui] chinese acad sci inst semicond state key lab integrated optoelect beijing 100083 peoples r china; [you liping; ma renmin] peking univ electron microscopy lab beijing 100871 peoples r china; [you liping; ma renmin] peking univ sch phys beijing 100871 peoples r china; [yang hui] chinese acad sci suzhou inst nanotech & nanobion suzhou 215123 peoples r china
KeywordLight-emitting-diodes Fundamental-band Gap Nanowires Heterostructures Nanostructures Mocvd Polar
Subject Area半导体物理
Funding OrganizationNational Natural Science Foundation of China 60506001 604760216057600360776047National Basic Research Program 2007CB936700 We are grateful to Qian Sun for his critical reading and helpful discussions. This work is supported by the National Natural Science Foundation of China (Grant Nos. 60506001 60476021 60576003 and 60776047) and National Basic Research Program (Contract No. 2007CB936700)
Indexed BySCI
Language英语
Date Available2010-03-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/7051
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorSun X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: xiansun@semi.ac.cn; dsjiang@red.semi.ac.cn
Recommended Citation
GB/T 7714
Sun X,Jiang DS,Liu WB,et al. Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods[J]. JOURNAL OF APPLIED PHYSICS,2009,106(2):Art. No. 026102.
APA Sun X.,Jiang DS.,Liu WB.,Zhu JH.,Wang H.,...&dsjiang@red.semi.ac.cn.(2009).Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods.JOURNAL OF APPLIED PHYSICS,106(2),Art. No. 026102.
MLA Sun X,et al."Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods".JOURNAL OF APPLIED PHYSICS 106.2(2009):Art. No. 026102.
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