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纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
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246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 1, 页码: 32-35
Authors:  颜廷静;  种明;  赵德刚;  张爽;  陈良惠
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一种测量p-GaN载流子浓度的方法 期刊论文
物理学报, 2011, 卷号: 60, 期号: 3, 页码: 721-728
Authors:  周梅;  赵德刚
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氮化镓基多波段探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  刘文宝;  孙 苋;  赵德刚;  刘宗顺;  张书明;  朱建军;  杨 辉
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利用光辅助氧化湿法刻蚀Ⅲ族氮化物的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  刘文宝;  孙 苋;  赵德刚;  刘宗顺;  张书明;  朱建军;  杨 辉
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Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  Deng Y;  Zhao DG;  Wu LL;  Liu ZS;  Zhu JJ;  Jiang DS;  Zhang SM;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Gan  Ultraviolet And Infrared Photodetector  Quantum Efficiency  Solar-blind  
高阻氮化镓外延层的异常光吸收 期刊论文
物理学报, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Authors:  刘文宝;  赵德刚;  江德生;  刘宗顺;  朱建军;  张书明;  杨辉
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器件参数对GaN基n+-GaN/i-Alx Ga1-xN/n+-GaN结构紫外和红外双色探测器中紫外响应的影响 期刊论文
物理学报, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  邓懿;  赵德刚;  吴亮亮;  刘宗顺;  朱建军;  江德生;  张书明;  梁骏吾
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First principle study of Mg, Si and Mn co-doped GaN 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 1, 页码: 450-458
Authors:  Xing HY;  Fan GH;  Zhang Y;  Zhao DG;  Fan GH S China Normal Univ Inst Optoelect Mat & Technol Guangzhou 510631 Guangdong Peoples R China. E-mail Address: hy.xing@yahoo.com.cn;  gfan@scnu.edu.cn
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Mg Si And Mn Co-doped Gan  Electronic Structure  T-c  Optical Properties  
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响 期刊论文
物理学报, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:  张爽;  赵德刚;  刘宗顺;  朱建军;  张书明;  王玉田;  段俐宏;  刘文宝;  江德生;  杨辉
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