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结构参数对p-i-n结构InGaN太阳能电池性能的影响及机理 期刊论文
物理学报, 2012, 卷号: 61, 期号: 16, 页码: 168402-1-168402-6
Authors:  周梅,赵德刚
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Influence of structure parameters on the performance of p-i-n InGaN solar cell 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 16, 页码: 168402
Authors:  Zhou M (Zhou Mei);  Zhao DG (Zhao De-Gang)
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一种测量p-GaN载流子浓度的方法 期刊论文
物理学报, 2011, 卷号: 60, 期号: 3, 页码: 721-728
Authors:  周梅;  赵德刚
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A new p-n structure ultraviolet photodetector with p(-)-GaN active region 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 10, 页码: 7255-7260
Authors:  Zhou M (Zhou Mei);  Zhao DG (Zhao De-Gang);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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p Menus Type Gan  
以弱p型为有源区的新型p-n结构GaN紫外探测器 期刊论文
物理学报, 2009, 卷号: 58, 期号: 10, 页码: 7255-7260
Authors:  周梅;  赵德刚
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结构参数对GaN肖特基紫外探测器性能的影响及器件设计 期刊论文
发光学报, 2009, 卷号: 30, 期号: 6, 页码: 824-831
Authors:  周梅;  赵德刚
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p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响 期刊论文
物理学报, 2008, 卷号: 57, 期号: 7, 页码: 4570-4574
Authors:  周梅;  赵德刚
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一种减小GaN基肖特基结构紫外探测器暗电流的方法 期刊论文
物理学报, 2008, 卷号: 57, 期号: 4, 页码: 2548-2553
Authors:  周梅;  常清英;  赵德刚
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A new Schottky barrier structure of GaN-based ultraviolet photodetector 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 9, 页码: 5513-5517
Authors:  Zhou, M (Zhou Mei);  Zuo, SH (Zuo Shu-Hua);  Zhao, DG (Zhao De-Gang);  Zhao, DG, China Agr Univ, Dept Phys, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Gan  
Performance improvement of GaN based Schottky barrier ultraviolet photodetector by adding a thin AlGaN window layer 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 6, 页码: 1745-1748
Authors:  Zhou M (Zhou Mei);  Zhao DG (Zhao De-Gang);  Zhao, DG, China Agr Univ, Dept Phys, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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