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氮化镓基激光器倒装用热沉的制作方法 专利
专利类型: 发明, 申请日期: 2008-07-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张书明;  刘宗顺;  杨辉
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制做氮化镓基激光器倒装用热沉的方法 专利
专利类型: 发明, 申请日期: 2008-07-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张书明;  刘宗顺;  杨辉
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一种制作氮化镓基激光器管芯的方法 专利
专利类型: 发明, 申请日期: 2008-03-26, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张书明;  种明;  朱建军;  杨辉
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Cathodoluminescence study of GaN-based film structures 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2008, 卷号: 19, 页码: S58-S63 Suppl. 1
Authors:  Jiang DS;  Jahn U;  Chen J;  Li DY;  Zhang SM;  Zhu JJ;  Zhao DG;  Liu ZS;  Yang H;  Ploog K;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Jahn U;  Ploog KH;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Cathodoluminescence  Mocvd  Algan  
Optical and Electrical Properties of GaN.Mg Grown by MOCVD 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 1, 页码: 29-32
Authors:  Yu Chichi;  Zhang Shuming;  Yang Hui;  Liang Junya
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Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1242-1245
Authors:  Ma Zhifang;  Wang Yutian;  Jiang Desheng;  Zhao Degang;  Zhang Shuming;  Zhu Jianjun;  Liu Zongshun;  Sun Baojuan;  Duan Ruifei;  Yang Hui;  Liang Junwu
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Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283
Authors:  Zhang LQ;  Zhang SM;  Yang H;  Cao Q;  Ji L;  Zhu JJ;  Liu ZS;  Zhao DG;  Jiang DS;  Duan LH;  Wang H;  Shi YS;  Liu SY;  Chen LH;  Liang JW;  Zhang, LQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hyang@red.semi.ac.cn
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Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 2, 页码: Art. No. 025107
Authors:  Majid A;  Ali A;  Zhu JJ;  Wang YT;  Liu W;  Lu GJ;  Liu WB;  Zhang LQ;  Liu ZS;  Zhao DG;  Zhang SM;  Jiang DS;  Yang H;  Ali, A, Quaid I Azam Univ, Dept Phys, Adv Mat Phys Lab, Islamabad, Pakistan. 电子邮箱地址: akbar@qau.edu.pk
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Luminescence  
Structural properties of ne implanted GaN 期刊论文
PHYSICA SCRIPTA, 2008, 卷号: 77, 期号: 3, 页码: Art. No. 035601
Authors:  Majid A;  Ali A;  Zhu JJ;  Liu W;  Lu GJ;  Zhang LQ;  Liu ZS;  Wang H;  Zhao DG;  Zhang SM;  Jiang DS;  Wang YT;  Yang H;  Israr M;  Majid, A, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: abdulmajid40@yahoo.com
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Raman-scattering