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Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287
Authors:  X.F. Liu ;   G.G. Yan ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   Y.W. He ;   W.S. Zhao ;   L. Wang ;   M. Guan ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 175-179
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   W.S. Zhao ;   L. Wang ;   Y.X. Cui ;   J.T. Li ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers 期刊论文
Journal of Crystal Growth, 2019, 卷号: 55, 页码: 1-4
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   X.H. Zhang ;   X.G. Li ;   G.S. Sun ;   Y.P. Zeng ;   Z.G. Wang
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Quantum oscillations in a two-dimensional electron system under low-frequency microwave irradiation 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 100, 页码: 235437
Authors:  Jian Mi;   Huiying Liu;   Junren Shi;   L. N. Pfeiffer;   K. W. West;   K. W. Baldwin;   Chi Zhang
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The compensation role of deep defects in the electric properties of lightly Si-doped GaN 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 773, 页码: 1182-1186
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   M. Li
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The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence 期刊论文
Superlattices and Microstructures, 2019, 卷号: 133, 页码: 106177
Authors:  H.R. Qi ;   S. Zhang ;   S.T. Liu ;   F. Liang ;   L.K. Yi ;   J.L. Huang ;   M. Zhou ;   Z.W. He ;   D.G. Zhao ;   D.S. Jiang
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Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer 期刊论文
Optics and Laser Technology, 2019, 卷号: 111, 页码: 810-813
Authors:  J. Yang ;   D.G. Zhao ;  D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   S.T. Liu ;   M. Li
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Current diffusion and efficiency droop in vertical light emitting diodes 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 1, 页码: 017203
Authors:  R Q Wan ;   T Li ;   Z Q Liu ;   X Y Yi ;   J X Wang ;   J H Li ;   W H Zhu ;   J M Li ;   L C Wang
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InGaN量子阱及薄膜材料特性研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  刘炜
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Ingan  量子阱  薄膜  极化效应  局域态  本底载流子浓度  
无权访问的条目 学位论文
Authors:  刘传威
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