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Synthesis and characterization of well-aligned Zn1-xMgxO nanorods and film by metal organic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 2, 页码: 278-281
Authors:  Yang AL;  Wei HY;  Liu XL;  Song HP;  Zheng GL;  Guo Y;  Jiao CM;  Yang SY;  Zhu QS;  Wang ZG;  Liu XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Nanostructures  Metalorganic Chemical Vapor Deposition  Zinc Compounds  Semiconducting Ii-vi Materials  
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727
Authors:  Zhao H;  Wang SM;  Zhao QX;  Sadeghi M;  Larsson A;  Zhao H Chalmers Photon Lab Dept Microtechnol & Nanosci SE-41296 Gothenburg Sweden. E-mail Address: zhaohuan@red.semi.ac.cn
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Quantum Well  Dilute Nitride  Rapid Thermal Annealing  Ingaas  Gainnas  
Growth behavior of AlInGaN films 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 3, 页码: 474-477
Authors:  Shang JZ;  Zhang BP;  Mao MH;  Cai LE;  Zhang JY;  Fang ZL;  Liu BL;  Yu JZ;  Wang QM;  Kusakabe K;  Ohkawa K;  Zhang BP Xiamen Univ Dept Phys Xiamen 361005 Peoples R China. E-mail Address: bzhang@xmu.edu.cn
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Scanning Electron Microscope  Strain  X-ray Diffraction  Alingan  
Growth behavior of AlInGaN films 会议论文
JOURNAL OF CRYSTAL GROWTH, Sendai, JAPAN, MAY 21-24, 2008
Authors:  Shang JZ;  Zhang BP;  Mao MH;  Cai LE;  Zhang JY;  Fang ZL;  Liu BL;  Yu JZ;  Wang QM;  Kusakabe K;  Ohkawa K;  Zhang, BP, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China.
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Scanning Electron Microscope  
Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
Authors:  Liang S;  Zhu HL;  Ye XL;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: liangsong@red.semi.ac.cn
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Photoluminescence  Metalorganic Vapor Phase Epitaxy  Self-assembled Quantum Dots  Indium Arsenide  
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
Authors:  Wei TB;  Hu Q;  Duan RF;  Wei XC;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei TB Chinese Acad Sci Inst Semicond Semicond Lighting Technol Res & Dev Ctr Beijing 100083 Peoples R China. E-mail Address: tbwei@semi.ac.cn
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Hrxrd  Pl  Stacking Fault  Hvpe  Gan  Semipolar