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Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 11, 页码: 113509
Authors:  Shi K (Shi K.);  Zhang PF (Zhang P. F.);  Wei HY (Wei H. Y.);  Jiao CM (Jiao C. M.);  Jin P (Jin P.);  Liu XL (Liu X. L.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Wang ZG (Wang Z. G.)
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Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire 期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 卷号: 157, 期号: 7, 页码: H721-H726
Authors:  Wei TB (Wei T. B.);  Hu Q (Hu Q.);  Duan RF (Duan R. F.);  Wei XC (Wei X. C.);  Yang JK (Yang J. K.);  Wang JX (Wang J. X.);  Zeng YP (Zeng Y. P.);  Wang GH (Wang G. H.);  Li JM (Li J. M.);  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. 电子邮箱地址:
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Atomic Force Microscopy  
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Authors:  Liu JM (Liu J. M.);  Liu XL (Liu X. L.);  Xu XQ (Xu X. Q.);  Wang J (Wang J.);  Li CM (Li C. M.);  Wei HY (Wei H. Y.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Fan YM (Fan Y. M.);  Zhang XW (Zhang X. W.);  Wang ZG (Wang Z. G.)
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Valence Band Offset  W-inn/h-bn Heterojunction  X-ray Photoelectron Spectroscopy  Conduction Band Offset  Valence Band Offset  Negative Electron-affinity  Indium Nitride  Wurtzite Gan  Surface  Film  Aln  Transport  Emission  Naxwo3  Growth  
The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文
SOLID STATE COMMUNICATIONS, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994
Authors:  Song HP (Song H. P.);  Zheng GL (Zheng G. L.);  Yang AL (Yang A. L.);  Guo Y (Guo Y.);  Wei HY (Wei H. Y.);  Li CM (Li C. M.);  Yang SY (Yang S. Y.);  Liu XL (Liu X. L.);  Zhu QS (Zhu Q. S.);  Wang ZG (Wang Z. G.);  Song, HP, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:;
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Zno  In2o3  Mocvd  Photoelectron Spectroscopies  In2o3-zno Films  Transparent  Oxide  Semiconductors  Inn  
Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 19, 页码: Art. No. 195312
Authors:  Zhou WZ (Zhou W. Z.);  Lin T (Lin T.);  Shang LY (Shang L. Y.);  Yu G (Yu G.);  Gao KH (Gao K. H.);  Zhou YM (Zhou Y. M.);  Wei LM (Wei L. M.);  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Guo SL (Guo S. L.);  Chu JH (Chu J. H.);  Zhou, WZ, E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China. 电子邮箱地址:;
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Inxga1-xas/inp Quantum-wells  Inversion Asymmetry  Hole Systems  Heterostructures  Subband  Layers  
A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes 期刊论文
APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 卷号: 97, 期号: 2, 页码: 465-468
Authors:  Ding K (Ding, K.);  Zeng YP (Zeng, Y. P.);  Wei XC (Wei, X. C.);  Li ZC (Li, Z. C.);  Wang JX (Wang, J. X.);  Lu HX (Lu, H. X.);  Cong PP (Cong, P. P.);  Yi XY (Yi, X. Y.);  Wang GH (Wang, G. H.);  Li JM (Li, J. M.);  Ding, K, Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Authors:  Zhang PF (Zhang, P. F.);  Liu XL (Liu, X. L.);  Wei HY (Wei, H. Y.);  Fan HB (Fan, H. B.);  Liang ZM (Liang, Z. M.);  Jin P (Jin, P.);  Yang SY (Yang, S. Y.);  Jiao CM (Jiao, C. M.);  Zhu QS (Zhu, Q. S.);  Wang ZG (Wang, Z. G.);  Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:;
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Combined structure of ZnO vertical well-aligned nanorods and net-like structures on AIN/sapphire 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 306, 期号: 1, 页码: 12-15
Authors:  Wei, HY (Wei, H. Y.);  Cong, GW (Cong, G. W.);  Zhang, PF (Zhang, P. F.);  Hu, WG (Hu, W. G.);  Wu, JJ (Wu, J. J.);  Jiao, CM (Jiao, C. M.);  Liu, XL (Liu, X. L.);  Zhu, QS (Zhu, Q. S.);  Wang, ZG (Wang, Z. G.);  Wei, HY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 10083, Peoples R China. 电子邮箱地址:
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Effects of the wave function localization in AlInGaN quaternary alloys 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 6, 页码: Art.No.061125
Authors:  Wang, F (Wang, Fei);  Li, SS (Li, Shu-Shen);  Xia, JB (Xia, Jian-Bai);  Jiang, HX (Jiang, H. X.);  Lin, JY (Lin, J. Y.);  Li, J (Li, Jingbo);  Wei, SH (Wei, Su-Huai);  Wang, F, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址:
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Special Quasirandom Structures  
Tunable spin transport in magnetic-electric superlattice 期刊论文
PHYSICS LETTERS A, 2006, 卷号: 358, 期号: 5-6, 页码: 470-473
Authors:  Wei JS (Wei J. S.);  Wang RZ (Wang R. Z.);  Yuan RY (Yuan R. Y.);  Song XM (Song X. M.);  Wang B (Wang B.);  Yan H (Yan H.);  Wang, RZ, Beijing Univ Technol, Coll Mat Sci & Engn, Lab Thin Film Mat, Beijing 100022, Peoples R China. E-mail:
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Spin Transport  Superlattice  Tunable Magnetic-electric  Room-temperature  Barriers  Conductance  Gas