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Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Authors:  Li, Huijie;  Liu, Guipeng;  Wei, Hongyuan;  Jiao, Chunmei;  Wang, Jianxia;  Zhang, Heng;  Dong Jin, Dong;  Feng, Yuxia;  Yang, Shaoyan;  Wang, Lianshan;  Zhu, Qinsheng;  Wang, Zhan-Guo
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
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Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
Authors:  Shi K;  Liu XL;  Li DB;  Wang J;  Song HP;  Xu XQ;  Wei HY;  Jiao CM;  Yang SY;  Song H;  Zhu QS;  Wang ZG;  Shi, K, 35 Tsinghua E Rd, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn;  lidb@ciomp.ac.cn
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Valence Band Offset  Gan/diamond Heterojunction  Xps  Conduction Band Offset  Chemical-vapor-deposition  Algan/gan Hemts  Diamond  Gan  Films  
Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 23, 页码: 7327-7330
Authors:  Zheng GL (Zheng Gaolin);  Wang J (Wang Jun);  Liu XL (Liu Xianglin);  Yang AL (Yang Anli);  Song HP (Song Huaping);  Guo Y (Guo Yan);  Wei HY (Wei Hongyuan);  Jiao CM (Jiao Chunmei);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Zheng, GL, 35 Tsinghua E Rd, Beijing 100083, Peoples R China. 电子邮箱地址: zhenggl@semi.ac.cn;  xlliu@semi.ac.cn
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Mgo  Rutile  Band Offset  X-ray Photoelectron Spectroscopy  Gate Dielectric  Dye-sensitized Solar Cells  
Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 8, 页码: 2606-2610
Authors:  Zheng GL;  Yang AL;  Wei HY;  Liu XL;  Song HP;  Guo;  Y;  Jia CH;  Jiao CM;  Yang SY;  Zhu QS;  Wang ZG;  Zheng, GL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail Address: zhenggl@semi.ac.cn;  xlliu@semi.ac.cn
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Zno  Metal-organic Chemical Vapor Deposition  Infrared Absorption  Surface  Ray Photoelectron-spectroscopy  Polar-surface  Epitaxy  
MOCVD生长温度对氧化锌薄膜结构及发光性能的影响 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 1, 页码: 34-38,43
Authors:  王振华;  杨安丽;  刘祥林;  魏鸿源;  焦春美;  朱勤生;  杨少延;  王占国
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Synthesis and characterization of well-aligned Zn1-xMgxO nanorods and film by metal organic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 2, 页码: 278-281
Authors:  Yang AL;  Wei HY;  Liu XL;  Song HP;  Zheng GL;  Guo Y;  Jiao CM;  Yang SY;  Zhu QS;  Wang ZG;  Liu XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Nanostructures  Metalorganic Chemical Vapor Deposition  Zinc Compounds  Semiconducting Ii-vi Materials  
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009) 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 12, 页码: Art. No. 129901
Authors:  Yang AL;  Song HP;  Liu XL;  Wei HY;  Guo Y;  Zheng GL;  Jiao CM;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Aluminium Compounds  Core Levels  Iii-v Semiconductors  Magnesium Compounds  Semiconductor Heterojunctions  Semiconductor-insulator Boundaries  X-ray Photoelectron Spectra  
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 5, 页码: Art. No. 052101
Authors:  Yang AL;  Song HP;  Liu XL;  Wei HY;  Guo Y;  Zheng GL;  Jiao CM;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Aluminium Compounds  Conduction Bands  Energy Gap  High Electron Mobility Transistors  Iii-v Semiconductors  Magnesium Compounds  Passivation  Semiconductor Heterojunctions  Valence Bands  Wide Band Gap Semiconductors  X-ray Photoelectron Spectra  
高温原位减薄硅基底的装置和方法 专利
专利类型: 发明, 申请日期: 2008-12-31, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘祥林;  杨少延;  焦春美
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