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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文
ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31
Authors:  X. F. Liu;  z G. G. Yan;  Z. W. Shen;  Z. X.Wen;  L. X. Tian;  W. S. Zhao;  L. Wang;  M. Guan;  F. Zhang;  G. S. Sun;  Y. P. Zeng
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Reversible transition between coherently strained BiFeO3 and the metastable pseudotetragonal phase on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 121, 页码: 054102
Authors:  Z. Fu;  Z. G. Yin;  X. W. Zhang;  N. F. Chen;  Y. J. Zhao;  Y. M. Bai;  D. Y. Zhao;  H. F. Zhang;  Y. D. Yuan;  Y. N. Chen;  J. L. Wu;  J. B. You
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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  X. Li;  S. T. Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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XPS study of impurities in Si-doped AlN film 期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  L. C. Le;  W. Liu;  X.G. He;  X. J. Li;  X Li;  S. T Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 页码: 035124
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  J. J. Zhu;  Z. S. Liu;  J. Yang;  X. Li;  L. C. Le;  X. G. He;  W. Liu;  X. J. Li;  F. Liang;  B. S. Zhang;  H. Yang;  Y. T. Zhang;  G. T. Du
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Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Materials Technology, 2016
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. Li;  S. T. Liu;  H. Yang;  L. Q. Zhang;  J. P. Liu;  Y. T. Zhang;  G. T. Du
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Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 1, 页码: 014304
Authors:  P. Y. Zhou;  X. F. Wu;  K. Ding;  X. M. Dou;  G. W. Zha;  H. Q. Ni;  Z. C. Niu;  H. J. Zhu;  D. S. Jiang;  C. L. Zhao;  B. Q. Sun
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