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Spatial Distortion of Vibration Modes via Magnetic Correlation of Impurities 期刊论文
Physical Review Letters, 2018, 卷号: 120, 期号: 10, 页码: 105501
Authors:  F.S. Krasniqi;   Y. Zhong;   S.W. Epp;   L. Foucar;   M. Trigo;   J. Chen;   D.A. Reis;   H.L. Wang;   J.H. Zhao;   H.T. Lemke;   D. Zhu;   M. Chollet;   D.M. Fritz;   R. Hartmann;   L. Englert;   L. Strüder;   I. Schlichting;   J. Ullrich
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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Reversible transition between coherently strained BiFeO3 and the metastable pseudotetragonal phase on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 121, 页码: 054102
Authors:  Z. Fu;  Z. G. Yin;  X. W. Zhang;  N. F. Chen;  Y. J. Zhao;  Y. M. Bai;  D. Y. Zhao;  H. F. Zhang;  Y. D. Yuan;  Y. N. Chen;  J. L. Wu;  J. B. You
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Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors 期刊论文
Journal of Applied Physics, 2016, 卷号: 119, 期号: 10, 页码: 105304
Authors:  Y. F. Lao;  A. G. U. Perera;  H. L. Wang;  J. H. Zhao;  Y. J. Jin;  D. H. Zhang
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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  X. Li;  S. T. Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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XPS study of impurities in Si-doped AlN film 期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  L. C. Le;  W. Liu;  X.G. He;  X. J. Li;  X Li;  S. T Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 页码: 035124
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  J. J. Zhu;  Z. S. Liu;  J. Yang;  X. Li;  L. C. Le;  X. G. He;  W. Liu;  X. J. Li;  F. Liang;  B. S. Zhang;  H. Yang;  Y. T. Zhang;  G. T. Du
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Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Materials Technology, 2016
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. Li;  S. T. Liu;  H. Yang;  L. Q. Zhang;  J. P. Liu;  Y. T. Zhang;  G. T. Du
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Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes 期刊论文
Optics Express, 2016, 卷号: 24, 期号: 13, 页码: 13824-13831
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  X. J. Li;  X. G. He;  J. P. Liu;  L. Q. Zhang;  H. Yang;  Y. T. Zhang;  G. T. Du
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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  H. Yang;  Y. T. Zhang;  G. T. Du
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