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A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage 期刊论文
Applied Physics A: Materials Science and Processing, 2013, 卷号: 110, 期号: 1, 页码: 173-177
Authors:  Yingchun Fu, Xiaofeng Wang, Jiayong Zhang, Xiaodong Wang, Chun Chang, Huili Ma, Kaifang Cheng, Xiaogang Chen, Zhitang Song, Songlin Feng, An Ji, Fuhua Yang
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小尺寸相变存储器的关键技术研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  张加勇
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Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application 期刊论文
Applied Physics Letters, 2010, 卷号: 96, 期号: 21, 页码: 213505
Authors:  Zhang Jiayong;  Wang Xiaofeng;  Wang Xiaodong;  Ma Huili;  Cheng Kaifang;  Fan Zhongchao;  Li Yan;  Ji An;  Yang Fuhua
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Lithography-independent and large scale fabrication of a metal electrode nanogap 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 142-145
Authors:  Li Yan;  Wang Xiaofeng;  Zhang Jiayong;  Wang Xiaodong;  Fan Zhongchao;  Yang Fuhua
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Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 7, 页码: Art.No.073517
Authors:  Lu SL;  Jiang DS;  Dai JM;  Yang CL;  He HT;  Ge WK;  Wang JN;  Chang K;  Zhang JY;  Shen DZ;  Wang, JN, Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong, Hong Kong, Peoples R China. E-mail: phjwang@ust.hk
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Quantum Dots  Exchange Interaction  Magnetic-fields  Zn1-xmnxse  Znmnse  Excitons  
The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543
Authors:  Lu SL;  Wang JN;  Huang JS;  Bian LF;  Jiang DS;  Yang CL;  Dai JM;  Ge WK;  Wang YQ;  Zhang JY;  Shen DZ;  Lu SL,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Photoluminescence  Metalorganic Chemical Vapor Deposition  Epilayer  Semiconducting Ii-vi Materials  Molecular-beam Epitaxy  Gap  
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
Authors:  Yu GH;  Fan XW;  Guan ZP;  Zhang JY;  Zhao XW;  Shen DZ;  Zheng ZH;  Yang BJ;  Jiang DS;  Chen YB;  Zhu ZM;  Yu GH Chinese Acad Sci Lab Excited State Proc Changchun 130021 Peoples R China.
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Double Multi-quantum Wells  Photocurrent Spectra  Zncdse-znse  Spectroscopy  Photoluminescence  Heterostructures  Photodetectors  
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 1999, 卷号: 28, 期号: 5, 页码: 563-566
Authors:  Yu GH;  Fan XW;  Guan ZP;  Zhang JY;  Zhao XW;  Shen DZ;  Zheng ZH;  Yang BJ;  Jiang DS;  Chen YB;  Zhu ZM;  Yu GH,Chinese Acad Sci,Lab Excited State Proc,Changchun 130021,Peoples R China.
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Double Multi-quantum Wells  Photocurrent Spectra  Photoluminescence  Zncdse-znse  Heterostructures  Spectroscopy  Photodetectors  
一种平面相变存储器的制备方法 专利
专利类型: 发明, 专利号: CN201010531375.2, 公开日期: 2011-08-31
Inventors:  张加勇;  王晓峰;  马慧莉;  程凯芳;  王晓东;  杨富华
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平面相变存储器的制备方法 专利
专利类型: 发明, 专利号: CN201010283557.2, 公开日期: 2011-08-31
Inventors:  张加勇;  王晓峰;  马慧莉;  程凯芳;  王晓东;  杨富华
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