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A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage
Yingchun Fu, Xiaofeng Wang, Jiayong Zhang, Xiaodong Wang, Chun Chang, Huili Ma, Kaifang Cheng, Xiaogang Chen, Zhitang Song, Songlin Feng, An Ji, Fuhua Yang
2013
Source PublicationApplied Physics A: Materials Science and Processing
Volume110Issue:1Pages:173-177
Subject Area微电子学
Indexed ByEI
Language英语
Date Available2014-05-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24910
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Yingchun Fu, Xiaofeng Wang, Jiayong Zhang, Xiaodong Wang, Chun Chang, Huili Ma, Kaifang Cheng, Xiaogang Chen, Zhitang Song, Songlin Feng, An Ji, Fuhua Yang. A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage[J]. Applied Physics A: Materials Science and Processing,2013,110(1):173-177.
APA Yingchun Fu, Xiaofeng Wang, Jiayong Zhang, Xiaodong Wang, Chun Chang, Huili Ma, Kaifang Cheng, Xiaogang Chen, Zhitang Song, Songlin Feng, An Ji, Fuhua Yang.(2013).A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage.Applied Physics A: Materials Science and Processing,110(1),173-177.
MLA Yingchun Fu, Xiaofeng Wang, Jiayong Zhang, Xiaodong Wang, Chun Chang, Huili Ma, Kaifang Cheng, Xiaogang Chen, Zhitang Song, Songlin Feng, An Ji, Fuhua Yang."A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage".Applied Physics A: Materials Science and Processing 110.1(2013):173-177.
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