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相变存储器器件工艺研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  马慧莉
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A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage 期刊论文
Applied Physics A: Materials Science and Processing, 2013, 卷号: 110, 期号: 1, 页码: 173-177
Authors:  Yingchun Fu, Xiaofeng Wang, Jiayong Zhang, Xiaodong Wang, Chun Chang, Huili Ma, Kaifang Cheng, Xiaogang Chen, Zhitang Song, Songlin Feng, An Ji, Fuhua Yang
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Long-range-ordered Ag nanodot arrays grown on GaAs substrate using nanoporous alumina mask 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 卷号: 16, 期号: 1, 页码: 160-164
Authors:  Liu, Wen;  Wang, Xiaodong;  Xu, Rui;  Wang, Xiaofeng;  Cheng, Kaifang;  Ma, Huili;  Yang, Fuhua
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Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application 期刊论文
Applied Physics Letters, 2010, 卷号: 96, 期号: 21, 页码: 213505
Authors:  Zhang Jiayong;  Wang Xiaofeng;  Wang Xiaodong;  Ma Huili;  Cheng Kaifang;  Fan Zhongchao;  Li Yan;  Ji An;  Yang Fuhua
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一种平面相变存储器的制备方法 专利
专利类型: 发明, 专利号: CN201010531375.2, 公开日期: 2011-08-31
Inventors:  张加勇;  王晓峰;  马慧莉;  程凯芳;  王晓东;  杨富华
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平面相变存储器的制备方法 专利
专利类型: 发明, 专利号: CN201010283557.2, 公开日期: 2011-08-31
Inventors:  张加勇;  王晓峰;  马慧莉;  程凯芳;  王晓东;  杨富华
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平面相变存储器的制备方法 专利
专利类型: 发明, 专利号: CN201010520209.2, 公开日期: 2011-08-31
Inventors:  张加勇;  王晓峰;  马慧莉;  程凯芳;  王晓东;  杨富华
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相变存储器的制作方法 专利
专利类型: 发明, 专利号: CN201010263081.6, 公开日期: 2011-08-31
Inventors:  马慧莉;  王晓峰;  张加勇;  程凯芳;  王晓东;  季安;  杨富华
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通用的多种材料间全限制量子点的自对准制备方法 专利
专利类型: 发明, 公开日期: 2012-08-01
Inventors:  付英春;  王晓峰;  张加勇;  白云霞;  梁秀琴;  马慧莉;  季安;  杨富华
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通用的多种材料间全限制纳米线的自对准制备方法 专利
专利类型: 发明, 公开日期: 2012-07-25
Inventors:  付英春;  王晓峰;  张加勇;  白云霞;  梁秀琴;  马慧莉;  季安;  杨富华
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