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In0.53Ga0.47As/In0.52Al0.48As 雪崩光电二极管的数值模拟研究 期刊论文
红外与激光工程, 2016, 卷号: 45, 期号: 5, 页码: 98-102
Authors:  李慧梅;  胡晓斌;  白霖;  李晓敏;  于海龙;  徐云;  宋国峰
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Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 605
Authors:  Lv XQ (Lv, Xue-Qin);  Zhang JY (Zhang, Jiang-Yong);  Ying LY (Ying, Lei-Ying);  Liu WJ (Liu, Wen-Jie);  Hu XL (Hu, Xiao-Long);  Zhang BP (Zhang, Bao-Ping);  Qui ZR (Qui, Zhi-Ren);  Kuboya S (Kuboya, Shigeyuki);  Onabe K (Onabe, Kentaro)
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The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 11, 页码: Art. No. 117801
Authors:  Hu XL (Hu Xiao-Long);  Zhang JY (Zhang Jiang-Yong);  Shang JZ (Shang Jing-Zhi);  Liu WJ (Liu Wen-Jie);  Zhang BP (Zhang Bao-Ping);  Zhang, BP, Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China.
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Exciton-longitudinal-optical-phonon  Ingan/gan Single Quantum Well  Gan Cap Layer  Huang-rhys Factor  
Room temperature continuous-wave electrically-injected InGaAsP triangle and square microlasers 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7158, Beijing, PEOPLES R CHINA, NOV 16-19, 2008
Authors:  Huang YZ (Huang Yong-Zhen);  Wang SJ (Wang Shi-Jiang);  Che KJ (Che Kai-Jun);  Yang YD (Yang Yue-De);  Xiao JL (Xiao Jin-Long);  Hu YH (Hu Yong-Hong);  Du Y (Du Yun)
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Efficient hole transport in asymmetric coupled InGaN multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 16, 页码: Art.No.161110
Authors:  Zhang JY (Zhang Jiang-Yong);  Cai LE (Cai Li-E);  Zhang BP (Zhang Bao-Ping);  Hu XL (Hu Xiao-Long);  Jiang F (Jiang Fang);  Yu JZ (Yu Jin-Zhong);  Wang QM (Wang Qi-Ming);  Zhang, JY, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn;  qmwang@semi.ac.cn
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