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High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 5, 页码: Article no.55013
Authors:  Wu CM;  Zhang BP;  Shang JZ;  Cai LE;  Zhang JY;  Yu JZ;  Wang QM;  Wu, CM, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China.
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Chemical-vapor-deposition  Molecular-beam Epitaxy  Phase Epitaxy  Mirrors  Gan  Wavelengths  
Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 43, 期号: 1, 页码: 289-292
Authors:  Cai LE;  Zhang BP;  Zhang JY;  Wu CM;  Jiang F;  Hu XL;  Chen M;  Wang QM;  Zhang, BP, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China. bzhang@xmu.edu.cn
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