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The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 11, 页码: Art. No. 117801
Authors:  Hu XL (Hu Xiao-Long);  Zhang JY (Zhang Jiang-Yong);  Shang JZ (Shang Jing-Zhi);  Liu WJ (Liu Wen-Jie);  Zhang BP (Zhang Bao-Ping);  Zhang, BP, Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China.
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Exciton-longitudinal-optical-phonon  Ingan/gan Single Quantum Well  Gan Cap Layer  Huang-rhys Factor