The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

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	The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
	Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG; Sun XL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
	2000
会议名称	1st Asian Conference on Chemical Vapour Deposition
会议录名称	THIN SOLID FILMS, 368 (2)
页码	237-240
会议日期	MAY 10-13, 1999
会议地点	SHANGHAI, PEOPLES R CHINA
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0040-6090
部门归属	chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.
关键词	Metalorganic Chemical Vapor Deposition Cubic Gan Hexagonal Phase Content 4-circle X-ray Double Crystal Diffraction Molecular-beam Epitaxy Gallium Nitride Thin-films Silicon Gaas
学科领域	半导体材料
主办者	Chinese Vacuum Soc, Thin Films Comm.; Chinese Electr Soc, Thin Films Comm.; Nat Sci Fdn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14977
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun XL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Sun XL,Wang YY,Yang H,et al. The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2000:237-240.

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