SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition
Xu DP; Wang YT; Yang H; Li SF; Zhao DG; Fu Y; Zhang SM; Wu RH; Jia QJ; Zheng WL; Jiang XM; Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
2000
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume88Issue:6Pages:3762-3764
AbstractStrains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038 +/- 0.0009 Angstrom, which is in excellent agreement with the theoretical prediction of 4.503 Angstrom. (C) 2000 American Institute of Physics. [S0021-8979(00)07918-4].
metadata_83chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china; chinese acad sci, inst high energy phys, beijing 100083, peoples r china
KeywordMolecular-beam Epitaxy Nitride Semiconductors Stress
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12464
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorXu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Xu DP,Wang YT,Yang H,et al. Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition[J]. JOURNAL OF APPLIED PHYSICS,2000,88(6):3762-3764.
APA Xu DP.,Wang YT.,Yang H.,Li SF.,Zhao DG.,...&Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China..(2000).Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition.JOURNAL OF APPLIED PHYSICS,88(6),3762-3764.
MLA Xu DP,et al."Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition".JOURNAL OF APPLIED PHYSICS 88.6(2000):3762-3764.
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