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Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 54320
Authors:  Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ;  Sheng WD;  Liu HC;  Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk
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Wells  Relaxation  Hole  Photoluminescence  Semiconductors  Localization  Transitions  Excitons  Carriers  Growth  
Strain-compensated InP-based InGaAsInAlAs quantum cascade infrared detectors for35μm atmospheric window 期刊论文
Proceedings of SPIE- The International Society for Optical Engineering, 2011, 卷号: 8193, 页码: 81931X
Authors:  Zhai, Shen-Qiang;  Liu, Jun-Qi;  Kong, Ning;  Liu, Feng-Qi;  Li, Lu;  Wang, Li-Jun;  Wang, Zhan-Guo;  Zhai, S.-Q.
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Free Flight  Infrared Detectors  Infrared Imaging  Optical Communication  
Quantum cascade infrared photodetectors 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 8, 页码: 1397-1402
Authors:  Liu, Junqi;  Zhai, Shenqiang;  Kong, Ning;  Li, Lu;  Liu, Fengqi;  Wang, Lijun;  Wang, Zhanguo;  Liu, J.(jqliu@semi.ac.cn)
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Detectors  Electron Mobility  Infrared Detectors  Optoelectronic Devices  Photovoltaic Effects  Quantum Chemistry  Semiconductor Quantum Wells  
量子级联红外探测器 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 8, 页码: 1397-1402
Authors:  刘俊岐;  翟慎强;  孔宁;  李路;  刘峰奇;  王利军;  王占国
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Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks 期刊论文
PHYSICS LETTERS A, 2010, 卷号: 374, 期号: 47, 页码: 4793-4796
Authors:  Ning JQ (Ning J. Q.);  Xu SJ (Xu S. J.);  Wei ZF (Wei Z. F.);  Ruan XZ (Ruan X. Z.);  Ji Y (Ji Yang);  Zheng HZ (Zheng H. Z.);  Liu HC (Liu H. C.);  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址: sjxu@hkucc.hku.hk
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Optical Kerr Effect  Electron Spin  Quantum Disks  Inas/gaas  Refractive-index  Coherence  Gaas  Semiconductors  
High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 卷号: 25, 期号: 7, 页码: Art. No. 075011
Authors:  Liu JQ (Liu Junqi);  Kong N (Kong Ning);  Li L (Li Lu);  Liu FQ (Liu Fengqi);  Wang LJ (Wang Lijun);  Chen JY (Chen Jianyan);  Wang ZG (Wang Zhanguo);  Liu, JQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jqliu@semi.ac.cn
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Well Infrared Photodetectors  
Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 3, 页码: Art. No. 038501
Authors:  Kong N (Kong Ning);  Liu JQ (Liu Jun-Qi);  Li L (Li Lu);  Liu FQ (Liu Feng-Qi);  Wang LJ (Wang Li-Jun);  Wang ZG (Wang Zhan-Guo);  Kong, N, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail Address: fqliu@red.semi.ac.cn
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Well Infrared Photodetectors  Laser  
A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 4, 页码: Art. No. 047801
Authors:  Tang GH (Tang Guang-Hua);  Xu B (Xu Bo);  Jiang;  LW (Jiang Li-Wen);  Kong JX (Kong Jin-Xia);  Kong;  N (Kong Ning);  Liang DC (Liang De-Chun);  Liang P (Liang Ping);  Ye XL (Ye Xiao-Ling);  Jin P (Jin Peng);  Liu FQ (Liu Feng-Qi);  Chen YH (Chen Yong-Hai);  Wang ZG (Wang Zhan-Guo);  Tang, GH, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: tghsugar@semi.ac.cn
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Mu-m  Temperature  Detectors  Operation  
量子级联探测器的研究 学位论文
, 北京: 中国科学院研究生院, 2010
Authors:  孔宁
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Optical properties of light-hole excitons in GaN epilayers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 11, 页码: Article no.116103
Authors:  Zhang F;  Xu SJ;  Ning JQ;  Zheng CC;  Zhao DG;  Yang H;  Che CM;  Zhang, F, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. sjxu@hkucc.hku.hk
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Transitions  Absorption