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Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate 期刊论文
NANOSCALE RESEARCH LETTERS, 2013, 卷号: 8, 页码: 27
Authors:  Li, Tianfeng;  Gao, Lizhen;  Lei, Wen;  Guo, Lijun;  Yang, Tao;  Chen, Yonghai;  Wang, Zhanguo
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Influence of InAs deposition. thickness on the structural and optical properties of InAs quantum wires 期刊论文
JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING, 2007, 卷号: 14, 期号: 4, 页码: 341-344
Authors:  Wang YL (Wang Yuanli);  Cui H (Cui Hua);  Lei W (Lei Wen);  Su YH (Su Yahong);  Chen YH (Chen Yonghai);  Wu J (Wu Ju);  Wang ZG (Wang Zhanguo);  Wang, YL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: yuanli.wang@axt.com
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Quantum Wire  
多孔磷化铟阻挡层以及多孔磷化铟的腐蚀液及使用方法 专利
专利类型: 发明, 申请日期: 2006-08-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  车晓玲;  刘峰奇;  黄秀颀;  雷文;  刘俊岐;  路秀真
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InP 基InAs 纳米结构材料的生长、光电性质与其器件应用研究 学位论文
, 北京: 中国科学院半导体研究所, 2006
Authors:  雷文
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一种多孔磷化铟的电化学池及电化学腐蚀体系及方法 专利
专利类型: 发明, 申请日期: 2005-12-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  车晓玲;  刘峰奇;  黄秀颀;  雷文;  刘俊岐;  王占国
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Application of step-scan FTIR to the research of quantum cascade lasers 期刊论文
Chinese Optics Letters, 2005, 卷号: 3, 期号: 10, 页码: 603-604
Authors:  Liu Junqi;  Lu Xiuzhen;  Guo Yu;  Huang Xiuqi;  Che Xiaoling;  Lei Wen;  Liu Fengqi
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InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 309-313
Authors:  黄秀颀;  刘峰奇;  车晓玲;  刘俊岐;  雷文;  王占国
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