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Confined and Interface Phonons in Chirped GaAs-AlGaAs Superlattices 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 6, 页码: 064211
Authors:  Hu, YZ;  Liu, FQ;  Wang, LJ;  Liu, JQ;  Wang, ZG
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Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate 期刊论文
THIN SOLID FILMS, 2012, 卷号: 520, 期号: 16, 页码: 5361-5366
Authors:  Hu, WX;  Cheng, BW;  Xue, CL;  Su, SJ;  Liu, Z;  Li, YM;  Wang, QM;  Wang, LJ;  Liu, JQ;  Ding, J;  Lin, GJ;  Lin, ZD
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Facet temperature distribution of a room temperature continuous-wave operating quantum cascade laser 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 卷号: 45, 期号: 32, 页码: 325103
Authors:  Hu YZ (Hu, Yongzheng);  Wang LJ (Wang, Lijun);  Zhang JC (Zhang, Jinchuan);  Li L (Li, Lu);  Liu JQ (Liu, Junqi);  Liu FQ (Liu, Fengqi);  Wang ZG (Wang, Zhanguo)
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: 463
Authors:  Li, TF;  Chen, YH;  Lei, W;  Zhou, XL;  Luo, S;  Hu, YZ;  Wang, LJ;  Yang, T;  Wang, ZG;  Chen, YH (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China,
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Raman-scattering  Semiconducting Nanowires  Optoelectronic Devices  Phosphide Nanowires  Optical Phonons  Silicon  Crystals  Spectra  
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 54-59
Authors:  Zhang ML;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Tang J;  Feng C;  Jiang LJ;  Hu GX;  Ran JX;  Wang MG;  Zhang ML Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: mlzhang@semi.ac.cn
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Algan/gan Heterostructure  Superlattices (Sls)  Root Mean Square Roughness (Rms)  Sheet Resistance  
具光磁性质含MnInAs/GaAs量子点样品的结构及制备方法 专利
专利类型: 发明, 申请日期: 2008-06-11, 公开日期: 2009-06-04, 2009-06-11
Inventors:  胡良均;  陈涌海;  叶小玲;  王占国
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Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 8, 页码: Art. No. 083121
Authors:  Liu, HY;  Meng, ZM;  Dai, QF;  Wu, LJ;  Guo, Q;  Hu, W;  Liu, SH;  Lan, S;  Yang, T;  Lan, S, S China Normal Univ, Sch Informat & Optoelect Sci & Technol, Lab Photon Informat Technol, Guangzhou 510006, Guangdong, Peoples R China. 电子邮箱地址: slan@scnu.edu.cn
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Energy Relaxation  Electron Relaxation  Capture  Phonon  Inas  Gaas  Temperature  Dependence  Density  Time  
Mn-including InAs quantum dots fabricated by Mn implantation 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 卷号: 40, 期号: 9, 页码: 2869-2873
Authors:  Hu, LJ;  Chen, YH;  Ye, XL;  Jiao, YH;  Shi, LW;  Wang, ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@semi.ac.cn
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Mn-including  Inas Quantum Dots  Pl  Magnetic  
Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 卷号: 40, 期号: 3, 页码: 503-506
Authors:  Yu, LK;  Xu, B;  Wang, ZG;  Jin, P;  Zhao, C;  Lei, W;  Sun, J;  Hu, LJ;  Yu, LK, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: yulike@rcd.semi.ac.cn
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Growth Interruption  In Segregation  Photoluminescence  Molecular Beam Epitaxy  Quantum Dots  
Characteristics of triangle and square InP/InGaAsP microlasers 会议论文
ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, Athens, GREECE, JUN 22-26, 2008
Authors:  Huang YZ;  Wang SJ;  Che KJ;  Hu YH;  Du Y;  Yu LJ;  Huang, YZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
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Semiconductor Lasers