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The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 8, 页码: Art. No. 083513
Authors:  Zhou GY (Zhou G. Y.);  Chen YH (Chen Y. H.);  Tang CG (Tang C. G.);  Liang LY (Liang L. Y.);  Jin P (Jin P.);  Wang ZG (Wang Z. G.);  Zhou, GY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Quantum-dot System  Island Formation  In-situ  Evolution  Gaas  Photoluminescence  
控制自组织铟镓砷量子点成核的生长方法 专利
专利类型: 发明, 申请日期: 2009-09-23, 公开日期: 4007
Inventors:  梁凌燕;  叶小玲;  金 鹏;  陈涌海;  徐 波;  王占国 
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量子点-阱红外探测器的结构及其制备方法 专利
专利类型: 发明, 申请日期: 2008-09-24, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王志成;  徐波;  刘峰奇;  陈涌海;  王占国;  石礼伟;  梁凌燕
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GaAs基半导体量子点激光器管芯质量的检测和分析方法 专利
专利类型: 发明, 申请日期: 2008-07-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  梁凌燕;  叶小玲;  徐波;  陈涌海;  王占国
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Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
Authors:  Liang, LY;  Ye, XL;  Jin, P;  Chen, YH;  Wang, ZG;  Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Induced Refractive-index  Growth  Lasers  Gaas  
长波长自组装InAs/GaAs 量子点材料和激光器结构生长及性质研究 学位论文
, 北京: 中国科学院半导体研究所, 2008
Authors:  梁凌燕
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用固态磷裂解源炉分子束外延磷化铟材料的方法 专利
专利类型: 发明, 申请日期: 2007-06-13, 公开日期: 2009-06-04, 2009-06-11
Inventors:  李路;  刘峰奇;  周华兵;  梁凌燕;  吕小晶
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砷化镓基量子级联半导体激光器材料及生长方法 专利
专利类型: 发明, 申请日期: 2007-05-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  李路;  刘峰奇;  刘俊岐;  郭瑜;  周华兵;  梁凌燕;  吕小晶
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Effect of ultraviolet light on hybrid zinc oxide polymer bulk heterojunction solar cells 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 7, 页码: 2070-2073
Authors:  Liu JP (Liu Jun-Peng);  Qu SC (Qu Sheng-Chun);  Chen YH (Chen Yong-Hai);  Xu Y (Xu Ying);  Zeng XB (Zeng Xiang-Bo);  Liang LY (Liang Ling-Yan);  Wang ZJ (Wang Zhi-Jie);  Zhou HY (Zhou Hui-Ying);  Wang ZG (Wang Zhan-Guo);  Qu, SC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: qusc@163.com
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Conjugated Polymer  
Anomalous photoluminescence of InAs quantum dots implanted by Mn ions 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 卷号: 36, 期号: 2, 页码: 221-225
Authors:  Hu LJ;  Chen YH;  Ye XL;  Huang XQ;  Liang LY;  Ding F;  Wang ZG;  Hu, LJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: liangjun_hu@yahoo.com.cn
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Photoluminescence