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Design and fabrication of SiO2/Si3N4 dielectric distributed Bragg reflectors for ultraviolet optoelectronic applications 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 8, 页码: 87802
Authors:  Li, ZC;  Liu, B;  Zhang, R;  Zhang, Z;  Tao, T;  Xie, ZL;  Chen, P;  Jiang, RL;  Zheng, YD;  Ji, XL
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Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: 245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: Article no.245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D, Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China. rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Authors:  Liu B;  Zhang Z;  Zhang R;  Fu DY;  Xie ZL;  Lu H;  Schaff WJ;  Song LH;  Cui YC;  Hua XM;  Han P;  Zheng YD;  Chen YH;  Wang ZG;  Zhang, R, Nanjing Univ, Dept Phys, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China. 电子邮箱地址: rzhang@nju.edu.cn
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Band-gap  Temperature-dependence  Energy  Semiconductors  Spectra  Epitaxy  Growth  Layers  
Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs 期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2009, 卷号: 45, 期号: 5-6, 页码: 575-578
Authors:  Nie C;  Jiang RL;  Ji XL;  Xie ZL;  Liu B;  Han P;  Zhang R;  Zheng YD;  Nie C Nanjing Univ Nanjing 210093 Peoples R China. E-mail Address: nchbbc@gmail.com;  ndjrl@163.com;  jixiaoli2002@nju.org.cn;  xzl@nju.edu.cn;  mypostlb@163.com;  hanping@nju.cdu.cn;  rzhang@nju.edu.cn;  ydzheng@nju.edu.cn
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Algan  Distributed Bragg Reflector (Dbr)  Resonant-cavity-enhanced (Rce)  Transfer-matrix-approach (Tma)  Ultraviolet (Uv) Photodetector (Pd)  
Observation of the surface circular photogalvanic effect in InN films 期刊论文
SOLID STATE COMMUNICATIONS, 2009, 卷号: 149, 期号: 25-26, 页码: 1004-1007
Authors:  Zhang Z;  Zhang R;  Xie ZL;  Liu B;  Li M;  Fu DY;  Fang HN;  Xiu XQ;  Lu H;  Zheng YD;  Chen YH;  Tang CG;  Wang ZG;  Zhang R Nanjing Univ Key Lab Adv Photon & Elect Mat Nanjing 210093 Peoples R China. E-mail Address: rzhang@nju.edu.cn
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Inn  Surface Charge Accumulation Layer  Spin-dependent Current  Spin Splitting  
Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
Authors:  Zhang Z;  Zhang R;  Xie ZL;  Liu B;  Xiu XQ;  Li Y;  Fu DY;  Lu H;  Chen P;  Han P;  Zheng YD;  Tang CG;  Chen YH;  Wang ZG;  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Zhang Z Nanjing Univ Jiangsu Prov Key Lab Adv Photon & Elect Mat Nanjing 210093 Peoples R China. E-mail Address: rzhang@nju.edu.cn
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Inn  Dislocation  Carrier Origination  Localization  
厚度对MOCVD生长InN薄膜位错特性与光电性质的影响 期刊论文
物理学报, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
Authors:  张曾;  张荣;  谢自力;  刘斌;  修向前;  李弋;  傅德颐;  陆海;  陈鹏;  韩平;  郑有炓;  汤晨光;  陈涌海;  王占国
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Circular photogalvanic effect at inter-band excitation in InN 期刊论文
SOLID STATE COMMUNICATIONS, 2008, 卷号: 145, 期号: 4, 页码: 159-162
Authors:  Zhang, Z;  Zhang, R;  Liu, B;  Xie, ZL;  Xiu, XQ;  Han, R;  Lu, H;  Zheng, YD;  Chen, YH;  Tang, CG;  Wang, ZG;  Zhang, R, Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China. 电子邮箱地址: rzhang@nju.edu.cn
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Inn  Photogalvanic  Inter-band Transition  
The growth temperatures dependence of optical and electrical properties of InN films 期刊论文
SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY, 2008, 卷号: 51, 期号: 3, 页码: 237-242
Authors:  Liu, B;  Zhang, R;  Xie, ZL;  Xiu, XQ;  Li, L;  Kong, JY;  Yu, HQ;  Han, P;  Gu, SL;  Shi, Y;  Zheng, YD;  Tang, CG;  Chen, YH;  Wang, ZG;  Zhang, R, Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China. 电子邮箱地址: rzhang@nju.edu.cn
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Metalorganic Chemical Vapor Deposition  X-ray Diffraction  Photoluminescence