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面向新型红外探测应用的GaSb单晶制备、物性及缺陷控制 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  白永彪
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Impurity band conduction in Mn-doped p type InAs single crystal 期刊论文
Materials Science in Semiconductor Processing, 2018, 卷号: 84, 页码: 115-118
Authors:  Guiying Shen ;   Youwen Zhao ;   Yongbiao Bai ;   Ding Yu ;   Jingming Liu ;   Hui Xie ;   Zhiyuan Dong ;   Jun Yang ;   Fengyun Yang ;   Fenghua Wang
Adobe PDF(436Kb)  |  Favorite  |  View/Download:44/0  |  Submit date:2019/11/15
LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method 期刊论文
Journal of Electronic Materials, 2018, 卷号: 47, 期号: 9, 页码: 4998-5001
Authors:  Guiying Shen;  Youwen Zhao;  Jingming Liu;  Yongbiao Bai;  Zhiyuan Dong;  Hui Xie;  Xiaoyu Chen
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Enhancement of below gap transmission of InAs single crystal via suppression of native defects 期刊论文
Materials Research Express, 2017, 卷号: 4, 期号: 3, 页码: 036203
Authors:  Guiying Shen;  Youwen Zhao;  Zhiyuan Dong;  Jingming Liu;  Hui Xie;  Yongbiao Bai;  Xiaoyu Chen
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Carbon agent chemical vapor transport growth of Ga2O3 crystal 期刊论文
Journal of Semiconductors, 2016, 卷号: 37, 期号: 10, 页码: 103004
Authors:  Su Jie;  Liu Tong;  Liu Jingming;  Yang Jun;  Shen Guiying;  Bai Yongbiao;  Dong Zhiyuan;  Zhao Youwen
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