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Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 2, 页码: 022002
Authors:  Yu, Zhou;  Xinxing, Li;  Renbing, Tan;  Wei, Xue;  Yongdan, Huang;  Shitao, Lou;  Baoshun, Zhang;  Hua, Qin
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Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 2, 页码: 217-219
Authors:  Yu, Guohao;  Wang, Yue;  Cai, Yong;  Dong, Zhihua;  Zeng, Chunhong;  Zhang, Baoshun
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A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 6, 页码: 747-749
Authors:  Yu, Guohao;  Cai, Yong;  Wang, Yue;  Dong, Zhihua;  Zeng, Chunhong;  Zhao, Desheng;  Qin, Hua;  Zhang, Baoshun
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硅基可协变衬底上生长三族氮化物的方法 专利
专利类型: 发明, 申请日期: 2004-10-20, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张宝顺;  杨辉
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Si(111)衬底无微裂GaN的MOCVD生长 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 4, 页码: 410-414
Authors:  张宝顺;  伍墨;  陈俊;  沈晓明;  冯淦;  刘建平;  史永生;  段丽宏;  朱建军;  杨辉
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缓冲层生长压力对MOCVD GaN性能的影响 期刊论文
中国科学. E辑, 技术科学, 2004, 卷号: 34, 期号: 0, 页码: 1
Authors:  陈俊;  张书明;  张宝顺;  朱建军;  冯淦;  段俐宏;  王玉田;  杨辉;  郑文琛
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GaN基MSM结构紫外光探测器 期刊论文
中国科学. G辑, 物理, 2003, 卷号: 33, 期号: 1, 页码: 34-38
Authors:  王俊;  赵德刚;  刘宗顺;  冯淦;  朱建军;  沈晓民;  张宝顺;  杨辉
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GaN外延膜厚度的x射线双晶衍射测量 期刊论文
中国科学. G辑,物理, 2003, 卷号: 33, 期号: 2, 页码: 122-125
Authors:  冯淦;  朱建军;  沈晓明;  张宝顺;  赵德刚;  王玉田;  杨辉;  梁骏吾
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立方相GaN的持续光电导 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 1, 页码: 34-38
Authors:  张泽洪;  赵德刚;  孙元平;  冯志宏;  沈晓明;  张宝顺;  冯淦;  郑新和;  杨辉
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用侧向外延生长法降低立方相GaN中的层错密度 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 10, 页码: 1093-1097
Authors:  沈晓明;  付羿;  冯淦;  张宝顺;  冯志宏;  杨辉
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