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Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications 期刊论文
NANOTECHNOLOGY, 2010, 卷号: 21, 期号: 7, 页码: Art. No. 075303
Authors:  Zhang JY;  Wang XF;  Wang XD;  Fan ZC;  Li Y;  Ji A;  Yang FH;  Wang, XF, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China. E-mail Address:;;
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Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application 期刊论文
Applied Physics Letters, 2010, 卷号: 96, 期号: 21, 页码: 213505
Authors:  Zhang Jiayong;  Wang Xiaofeng;  Wang Xiaodong;  Ma Huili;  Cheng Kaifang;  Fan Zhongchao;  Li Yan;  Ji An;  Yang Fuhua
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一种纳米尺度镍金空气桥的制备方法 专利
专利类型: 发明, 申请日期: 2009-02-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张杨;  刘剑;  李艳;  杨富华
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Fabrication and optical optimization of spot-size converters with strong cladding layers 期刊论文
JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS, 2009, 卷号: 11, 期号: 8, 页码: Art. No. 085002
Authors:  Liu Y;  Li Y;  Fan ZC;  Xing B;  Yu YD;  Yu JZ;  Liu Y Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Silicon-on-insulator (Soi)  Spot-size Converters  
PECVD和ICP刻蚀技术及应用 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  李艳
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Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films 期刊论文
THIN SOLID FILMS, 2009, 卷号: 517, 期号: 6, 页码: 1989-1994
Authors:  Zhou W;  Yang JL;  Li Y;  Ji A;  Yang FH;  Yu YD;  Yang JL Chinese Acad Sci Inst Semicond Qinghua Donglu A 35 Beijing 100083 Peoples R China. E-mail Address:
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Bulge Test  Fracture Property  Silicon Nitride  Weibull Distribution Function  
Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 151-154
Authors:  Tang Longjuan;  Zhu Yinfang;  Yang Jinling;  Li Yan;  Zhou Wei;  Xie Jing;  Liu Yunfei;  Yang Fuhua
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Lithography-independent and large scale fabrication of a metal electrode nanogap 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 142-145
Authors:  Li Yan;  Wang Xiaofeng;  Zhang Jiayong;  Wang Xiaodong;  Fan Zhongchao;  Yang Fuhua
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低损伤PECVD沉积致密SiO2的方法 专利
专利类型: 发明, 申请日期: 2008-05-07, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈宇;  王良臣;  伊晓燕;  李艳
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采用光刻和干法刻蚀制作倾斜侧壁二氧化硅结构的方法 专利
专利类型: 发明, 专利号: CN200910081983.5, 公开日期: 2011-08-31
Inventors:  唐龙娟;  杨晋玲;  解婧;  李艳;  杨富华
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