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Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 11, 页码: 8898-8902
Authors:  He J;  Zhang YC;  Xu B;  Wang ZG;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Scanning-tunneling-microscopy  Growth  Islands  Nm  
Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 7, 页码: 4169-4172
Authors:  Jin P;  Meng XQ;  Zhang ZY;  Li CM;  Xu B;  Liu FQ;  Wang ZG;  Li YG;  Zhang CZ;  Pan SH;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
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Franz-keldysh Oscillations  Microscopy  Islands  
InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 89, 期号: 7, 页码: 4186-4188
Authors:  Li YF;  Wang JZ;  Ye XL;  Xu B;  Liu FQ;  Ding D;  Zhang JF;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Matrix  Islands  Ingaas  
Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001) 期刊论文
JOURNAL OF APPLIED PHYSICS, 1999, 卷号: 85, 期号: 1, 页码: 619-621
Authors:  Liu FQ;  Wang ZG;  Wu J;  Xu B;  Gong Q;  Liang JB;  Liu FQ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Vapor-phase Epitaxy  Injection  Patterns  Islands