SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots
He J; Zhang YC; Xu B; Wang ZG; He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2003
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume93Issue:11Pages:8898-8902
AbstractThe structure and optical properties of In(Ga)As with the introduction of InGaAlAs or InAlAs seed dot layers are investigated. The area density and size homogeneity of the upper InGaAs dots are efficiently improved by the introduction of a buried layer of high-density dots. Our explanation for the realization of high density and size homogeneity dots is presented. When the GaAs spacer layer is too thin to cover the seed dots, the upper dots exhibit some optical properties like those of a quantum well. By analyzing the growth dynamics, we refer to this kind of dot as an empty-core dot. (C) 2003 American Institute of Physics.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordScanning-tunneling-microscopy Growth Islands Nm
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11556
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorHe J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
He J,Zhang YC,Xu B,et al. Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots[J]. JOURNAL OF APPLIED PHYSICS,2003,93(11):8898-8902.
APA He J,Zhang YC,Xu B,Wang ZG,&He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2003).Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots.JOURNAL OF APPLIED PHYSICS,93(11),8898-8902.
MLA He J,et al."Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots".JOURNAL OF APPLIED PHYSICS 93.11(2003):8898-8902.
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