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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 1, 页码: 17103
Authors:  Cao, ZF;  Lin, ZJ;  Lu, YJ;  Luan, CB;  Yu, YX;  Chen, H;  Wang, ZG
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Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 35, 页码: 355101
Authors:  Cui M;  Zhou TF;  Wang MR;  Huang J;  Huang HJ;  Zhang JP;  Xu K;  Yang H;  Cui, M (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China,;
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Light-emitting-diodes  Temperature-measurements  Gan  Scattering  Dependence  Junction  Phonons  Aln  
Plasmonic Polymer Tandem Solar Cell 期刊论文
ACS NANO, 2011, 卷号: 5, 期号: 8, 页码: 6210-6217
Authors:  Yang J;  You JB;  Chen CC;  Hsu WC;  Tan HR;  Zhang XW;  Hong ZR;  Yang Y;  Yang, J (reprint author), Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA.
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Photovoltaic Cells  Absorption Enhancement  Self-organization  Efficiency  Nanoclusters  Fluorescence  Resonance  Design  Blends  
Research status of electro-absorption modulated lasers 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES V 丛书: Proceedings of SPIE 卷: 7987, Shanghai, 2010
Authors:  Zhu HL;  Liang S;  Zhao LJ;  Kong DH;  Wang W
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Monolithic Integration of Widely Tunable Sampled Grating DBR Laser with Tilted Semiconductor Optical Amplifier 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES V 丛书: Proceedings of SPIE 卷: 7987, Shanghai, 2010
Authors:  Ye N (Ye Nan);  Liu Y (Liu Yang);  Wang BJ (Wang BaoJun);  Zhou DB (Zhou DaiBing);  Pang JQ (Pang JiaoQing);  Zhao LJ (Zhao LingJuan);  Wang W (Wang Wei)
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A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 4, 页码: Art. No. 047801
Authors:  Tang GH (Tang Guang-Hua);  Xu B (Xu Bo);  Jiang;  LW (Jiang Li-Wen);  Kong JX (Kong Jin-Xia);  Kong;  N (Kong Ning);  Liang DC (Liang De-Chun);  Liang P (Liang Ping);  Ye XL (Ye Xiao-Ling);  Jin P (Jin Peng);  Liu FQ (Liu Feng-Qi);  Chen YH (Chen Yong-Hai);  Wang ZG (Wang Zhan-Guo);  Tang, GH, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Mu-m  Temperature  Detectors  Operation  
Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 6, 页码: Art. No. 063107
Authors:  Xu DW;  Tong CZ;  Yoon SF;  Zhao LJ;  Ding Y;  Fan WJ;  Xu, DW, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址:
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Gallium Arsenide  Iii-v Semiconductors  Indium Compounds  Quantum Dot Lasers  Surface Emitting Lasers  Dependent Output Characteristics  Semiconductor-lasers  1.3-mu-m  Vcsels  Well  Confinement  Power  
High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 11, 页码: Art. No. 114201
Authors:  Wang Y (Wang Yang);  Qiu YP (Qiu Ying-Ping);  Pan JQ (Pan Jiao-Qing);  Zhao LJ (Zhao Ling-Juan);  Zhu HL (Zhu Hong-Liang);  Wang W (Wang Wei);  Wang, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Auger Recombination  Threshold Current  Dependence  Device  
40 Gbits/s all-optical clock recovery for degraded signals using an amplified feedback laser 期刊论文
APPLIED OPTICS, 2010, 卷号: 49, 期号: 34, 页码: 6577-6581
Authors:  Wang L (Wang Li);  Zhao XF (Zhao Xiaofan);  Lou CY (Lou Caiyun);  Lu D (Lu Dan);  Sun Y (Sun Yu);  Zhao LJ (Zhao Lingjuan);  Wang W (Wang Wei);  Wang, L, Tsinghua Univ, Tsinghua Natl Lab Informat & Sci Technol, Dept Elect Engn, Beijing 100084, Peoples R China.
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Dfb Lasers  Modulator  
A simple wavelength-locking scheme of a tunable three-electrode distributed Bragg reflector laser for multiple ITU channel application in C band 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7844: Art. No. 784410 2010, Beijing, PEOPLES R CHINA, OCT 18-19, 2010
Authors:  Ye N (Ye Nan);  Liu Y (Liu Yang);  Zhao LJ (Zhao Ling-Juan)
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