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Shape effects on the electronic structure and the optical gain of InAsN/GaAs nanostructures: From a quantum lens to a quantum ring 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2012, 卷号: 52, 期号: 4, 页码: 618-631
Authors:  Chen J (Chen, J.);  Fan WJ (Fan, W. J.);  Xu Q (Xu, Q.);  Zhang XW (Zhang, X. W.);  Li SS (Li, S. S.);  Xia JB (Xia, J. B.)
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1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 卷号: 23, 期号: 2, 页码: 91-93
Authors:  Xu DW;  Yoon SF;  Ding Y;  Tong CZ;  Fan WJ;  Zhao LJ;  Xu, DW, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singaporen060085@ntu.edu.sg;  esfyoon@ntu.edu.sg;  YDing@ntu.edu.sg;  CZTong@ntu.edu.sg;  ewjfan@ntu.edu.sg;  ljzhao@red.semi.ac.cn
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Dielectric-free Approach  Quantum Dot (Qd)  Surface-relief Technique  Vertical-cavity Surface-emitting Lasers (Vcsels)  Emitting Lasers  
Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 7, 页码: Art. No. 073108
Authors:  Zhu YH (Zhu Yuan-Hui);  Xu Q (Xu Qiang);  Fan WJ (Fan Wei-Jun);  Wang JW (Wang Jian-Wei);  Zhu, YH, Nanyang Technol Univ, Sch EEE, 50 Nanyang Ave, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
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Alloys  Ge  
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 073111
Authors:  Ding Y (Ding Y.);  Fan WJ (Fan W. J.);  Ma BS (Ma B. S.);  Xu DW (Xu D. W.);  Yoon SF (Yoon S. F.);  Liang S (Liang S.);  Zhao LJ (Zhao L. J.);  Wasiak M (Wasiak M.);  Czyszanowski T (Czyszanowski T.);  Nakwaski W (Nakwaski W.);  Ding, Y, NanyangTechnolUniv, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: yding@ntu.edu.sg
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Vapor-phase Epitaxy  Photovoltage Spectroscopy  Photoluminescence  Modes  
Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 6, 页码: Art. No. 063107
Authors:  Xu DW;  Tong CZ;  Yoon SF;  Zhao LJ;  Ding Y;  Fan WJ;  Xu, DW, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: n060085@ntu.edu.sg
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Gallium Arsenide  Iii-v Semiconductors  Indium Compounds  Quantum Dot Lasers  Surface Emitting Lasers  Dependent Output Characteristics  Semiconductor-lasers  1.3-mu-m  Vcsels  Well  Confinement  Power  
Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach 期刊论文
APPLIED PHYSICS B-LASERS AND OPTICS, 2010, 卷号: 98, 期号: 4, 页码: 773-778 Sp. Iss.
Authors:  Ding Y;  Fan WJ;  Xu DW;  Tong CZ;  Liu Y;  Zhao LJ;  Ding, Y, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. E-mail Address: yding@ntu.edu.sg;  ewjfan@ntu.edu.sg
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Surface-emitting Lasers  
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 12, 页码: Art. No. 123705
Authors:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Chen J Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore. E-mail Address: ewjfan@ntu.edu.sg
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Emission  Spectra  Lasers  8-band  
Electronic structure and optical gain of truncated InAs1-xNx/GaAs quantum dots 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 46, 期号: 3, 页码: 498-506
Authors:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Fan WJ Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore. E-mail Address: ewjfan@ntu.edu.sg
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Band Structure  K.p Method  Quantum Dots  Diluted Nitride  Optical Gain  
Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 8, 页码: Art. No. 085117
Authors:  Ding Y;  Fan WJ;  Xu DW;  Tong CZ;  Yoon SF;  Zhang DH;  Zhao LJ;  Wang W;  Liu Y;  Zhu NH;  Ding Y Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore. E-mail Address: yding@ntu.edu.sg
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Speed Semiconductor-lasers  Single-mode Vcsels  Transmission  Performance  Ratio  
High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 卷号: 21, 期号: 17, 页码: 1211-1213
Authors:  Xu DW;  Yoon SF;  Tong CZ;  Zhao LJ;  Ding Y;  Fan WJ;  Xu DW Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore. E-mail Address: n060085@ntu.edu.sg;  esfyoon@ntu.edu.sg;  cztong@ntu.edu.sg;  ljzhao@red.semi.ac.cn;  yding@ntu.edu.sg;  ewjfan@ntu.edu.sg
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Quantum Dot (Qd)  Single-mode  Thermal Stability  Threshold Current  Vertical-cavity Surface-emitting Lasers (Vcsels)