SEMI OpenIR

Browse/Search Results:  1-10 of 12 Help

Selected(0)Clear Items/Page:    Sort:
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: 463
Authors:  Li, TF;  Chen, YH;  Lei, W;  Zhou, XL;  Luo, S;  Hu, YZ;  Wang, LJ;  Yang, T;  Wang, ZG;  Chen, YH (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China,
Adobe PDF(651Kb)  |  Favorite  |  View/Download:754/153  |  Submit date:2012/02/06
Raman-scattering  Semiconducting Nanowires  Optoelectronic Devices  Phosphide Nanowires  Optical Phonons  Silicon  Crystals  Spectra  
Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 35, 页码: 355101
Authors:  Cui M;  Zhou TF;  Wang MR;  Huang J;  Huang HJ;  Zhang JP;  Xu K;  Yang H;  Cui, M (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China, tfzhou2007@sinano.ac.cn;  kxu2006@sinano.ac.cn
Adobe PDF(188Kb)  |  Favorite  |  View/Download:1508/438  |  Submit date:2012/02/06
Light-emitting-diodes  Temperature-measurements  Gan  Scattering  Dependence  Junction  Phonons  Aln  
Thermal carrier processes in bimodal-sized quantum dots with different lateral coupling strength 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 3, 页码: 31903
Authors:  Zhou XL;  Chen YH;  Li TF;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China, zhouxl06@semi.ac.cn
Adobe PDF(1309Kb)  |  Favorite  |  View/Download:881/243  |  Submit date:2012/02/06
Redistribution  
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Adobe PDF(1941Kb)  |  Favorite  |  View/Download:1531/395  |  Submit date:2011/07/05
Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays 期刊论文
APPLIED PHYSICS EXPRESS, 2011, 卷号: 4, 期号: 4, 页码: Article no.45001
Authors:  Liu JQ;  Wang JF;  Gong XJ;  Huang J;  Xu K;  Zhou TF;  Zhong HJ;  Qiu YX;  Cai DM;  Ren GQ;  Yang H;  Xu, K, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China. kxu2006@sinano.ac.cn
Adobe PDF(1662Kb)  |  Favorite  |  View/Download:1567/361  |  Submit date:2011/07/05
Output Voltage  Nanowires  Nanogenerators  Growth  
A practical route towards fabricating GaN nanowire arrays 期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Authors:  Liu, JQ;  Huang, J;  Gong, XJ;  Wang, JF;  Xu, K;  Qiu, YX;  Cai, DM;  Zhou, TF;  Ren, GQ;  Yang, H;  Xu, K (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China,kxu2006@sinano.ac.cn
Adobe PDF(612Kb)  |  Favorite  |  View/Download:1042/366  |  Submit date:2012/02/06
Light-emitting-diodes  Epitaxial Lateral Overgrowth  Chemical-vapor-deposition  Well Nanorod Arrays  Ultraviolet-light  Growth  Nanogenerators  Dislocations  Brightness  Layers  
Dislocation cross-slip in GaN single crystals under nanoindentation 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 22, 页码: Art. No. 221906
Authors:  Huang J;  Xu K;  Gong XJ;  Wang JF;  Fan YM;  Liu JQ;  Zeng XH;  Ren GQ;  Zhou TF;  Yang H
Adobe PDF(825Kb)  |  Favorite  |  View/Download:1393/547  |  Submit date:2011/07/06
Berkovich Nanoindentation  Thin-films  Indentation  Mechanisms  Epilayers  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Adobe PDF(2010Kb)  |  Favorite  |  View/Download:1343/281  |  Submit date:2011/07/05
Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size  
Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 卷号: 43, 期号: 4, 页码: 869-873
Authors:  Li TF;  Chen YH;  Lei W;  Zhou XL;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
Adobe PDF(739Kb)  |  Favorite  |  View/Download:1578/391  |  Submit date:2011/07/05
Quantum Dots  Light-emission  Wells  Photoluminescence  
Internal quantum efficiency analysis of solar cell by genetic algorithm 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 11, 页码: 1888-1891
Authors:  Xiong KL (Xiong Kanglin);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, Chinese Acad Sci, Inst Semicond, A35 Qing Hua E Rd, Beijing 100083, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
Adobe PDF(301Kb)  |  Favorite  |  View/Download:1193/519  |  Submit date:2010/11/27
Internal Quantum Efficiency  Surface Recombination  Genetic Algorithm  Full Spectra