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基于目标特征尺寸的可视化被动测距系统 期刊论文
光学精密工程, 2018, 卷号: 26, 期号: 1, 页码: 245-252
Authors:  杨金宝;  杨晨;  刘建国;  祝宁华;  于丽娟;  刘亚超
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特征尺寸  被动测距  可视化  
Characteristics of III-nitride based laser diode employed for short range underwater wireless optical communications 期刊论文
Optics Communications, 2018, 卷号: 410, 页码: 525–530
Authors:  Bin Xue ;   Zhe Liu ;   ie Yang ;   Liangsen Feng ;   Ning Zhang ;   Junxi Wang ;   Jinmin Li
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The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells 期刊论文
Superlattices and Microstructures, 2018, 卷号: 117, 页码: 228-234
Authors:  Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Wei Liu ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang ;   Wenjie Wang ;   Mo Li ;   Yuantao Zhang ;   Guotong Du
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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors:  J. Yang ;   S.T. Liu ;   X.W. Wang ;   D.G. Zhao ;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   L.Q. Zhang ;   H. Yang ;   W.J. Wang ;   M. Li
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Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文
OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17
Authors:  J. Yang ;   D.G. Zhao;   D.S. Jiang ;   S.T. Liu ;   P. Chen ;   J.J. Zhu ;   F. Liang ;   W. Liu ;   M. Li
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Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers 期刊论文
IEEE Photonics Journal, 2018, 卷号: 10, 期号: 4, 页码: 1503107
Authors:  Jing Yang;  Degang Zhao;  Zongshum Liu;  De-Sheng Jiang;  Jianjun Zhu;  Ping Chen;  Feng Liang;  S. T. Liu;  Wei Liu;  Yao Xing;  Mo Li
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Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs 期刊论文
Superlattices and Microstructures, 2018, 卷号: 114, 页码: 32-36
Authors:  Xiaowei Wang ;   Jing Yang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Wei Liu ;   Feng Liang;   Shuangtao Liu ;   Yao Xing ;   Wenjie Wang ;   Mo Li
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Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN 期刊论文
Nanomaterials (Basel, Switzerland), 2018, 卷号: 8, 期号: 12, 页码: 1026
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Shuangtao Liu;  Yao Xing;  Liqun Zhang
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Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells 期刊论文
OPTICS EXPRESS, 2018, 卷号: 26, 期号: 17, 页码: 21736-21744
Authors:  LIYUAN PENG ;   DEGANG ZHAO ;   DESHENG JIANG ;   JIANJUN ZHU ;   ZONGSHUN LIU ;   PING CHEN ;   JING YANG ;   WEI LIU ;   FENG LIANG ;   YAO XING ;   SHUANGTAO LIU ;   LIQUN ZHANG ;   WENJIE WANG ;   MO LI ;   YUANTAO ZHANG ;   GUOTONG DU
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Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption 期刊论文
Applied Surface Science, 2018, 卷号: 456, 页码: 487-492
Authors:  Wei Liu;  Jing Yang;  Degang Zhao;  Desheng Jiang;  Jianjun Zhu;  Ping Chen;  Zongshun Liu;  Feng Liang;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Wenjie Wang;  Mo Li;  Yuantao Zhang;  Guotong Du
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