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Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 600
Authors:  Zhang HY (Zhang, Hongyi);  Chen YH (Chen, Yonghai);  Zhou GY (Zhou, Guanyu);  Tang CG (Tang, Chenguang);  Wang ZG (Wang, Zhanguo)
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Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size  
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Spectroscopy  
Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 卷号: 43, 期号: 29, 页码: Art. No. 295401
Authors:  Zhou XL (Zhou X. L.);  Chen YH (Chen Y. H.);  Liu JQ (Liu J. Q.);  Jia CH (Jia C. H.);  Zhou GY (Zhou G. Y.);  Ye XL (Ye X. L.);  Xu B (Xu Bo);  Wang ZG (Wang Z. G.)
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Carrier Relaxation  States  Superlattices  Confinement  Laser  
The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 8, 页码: Art. No. 083513
Authors:  Zhou GY (Zhou G. Y.);  Chen YH (Chen Y. H.);  Tang CG (Tang C. G.);  Liang LY (Liang L. Y.);  Jin P (Jin P.);  Wang ZG (Wang Z. G.);  Zhou, GY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Quantum-dot System  Island Formation  In-situ  Evolution  Gaas  Photoluminescence  
Different growth mechanisms of bimodal In As/GaAs QDs 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 43, 期号: 1, 页码: 308-311
Authors:  Zhou GY;  Chen YH;  Zhou XL;  Xu B;  Ye XL;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Inas Quantum Dots  Gaas(001)  Relaxation  Transition  Gaas  
Study on the perfection of in situ P-injection synthesis LEC-InP single crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 264, 期号: 1-3, 页码: 17-20
Authors:  Zhou XL;  Zhao YW;  Sun NF;  Yang GY;  Xu YQ;  Sun TN;  Zhou, XL, Hebei Semicond Res Inst, POB 17940,Shijiazhuang, Hebei 050051, Peoples R China. 电子邮箱地址: tnsun@heinfo.net
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Etch-pit Density  
Tunable MQW-DBR lasers using selective area growth 会议论文
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086, SHANGHAI, PEOPLES R CHINA, MAY 08-11, 2000
Authors:  Liu GL;  Wang W;  Zhang JY;  Chen WX;  Xu GY;  Zhang BJ;  Zhou F;  Wang XJ;  Zhu HL;  Liu GL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
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Selective Area Growth  Multi-quantum-well  Distributed Bragg Reflector Laser  Mocvd  Tunable Laser  Epitaxy  
Monolithic Integration of MQW DFB Laser and EA Modulator in 1.55μm 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 5, 页码: 412
Authors:  Yan XJ(颜学进);  Xu GY(许国阳);  Zhu HL(朱洪亮);  Zhou F(周帆);  Wang XJ(汪孝杰);  Zhang JY(张静媛);  Tian HL(田慧良);  Ma CH(马朝华);  Shu HY(舒惠云);  Bai YX(白云霞);  Bi KK(毕可奎);  Wu RH(吴荣汉);  Wang QM(王启明);  Wang W(王圩)
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