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Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 卷号: 540, 页码: 46-48
Authors:  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Le LC (Le, L. C.);  Wu LL (Wu, L. L.);  Li L (Li, L.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Liu ZS (Liu, Z. S.);  Zhang SM (Zhang, S. M.);  Jia QJ (Jia, Q. J.);  Yang H (Yang, Hui)
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Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 8, 页码: 085017
Authors:  Wu LL (Wu, L. L.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Chen P (Chen, P.);  Le LC (Le, L. C.);  Li L (Li, L.);  Liu ZS (Liu, Z. S.);  Zhang SM (Zhang, S. M.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Zhang BS (Zhang, B. S.);  Yang H (Yang, H.)
Adobe PDF(395Kb)  |  Favorite  |  View/Download:1013/207  |  Submit date:2013/04/02
Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 053104
Authors:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Wu LL (Wu, L. L.);  Li L (Li, L.);  Chen P (Chen, P.);  Liu ZS (Liu, Z. S.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
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Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 25-30
Authors:  Zhu, JJ;  Fan, YM;  Zhang, H;  Lu, GJ;  Wang, H;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Zhang, SM;  Chen, GF;  Zhang, BS;  Yang, H
Adobe PDF(671Kb)  |  Favorite  |  View/Download:1111/369  |  Submit date:2013/02/27
Distribution of electric field and design of devices in GaN avalanche photodiodes 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2012, 卷号: 55, 期号: 4, 页码: 619-624
Authors:  Wu, LL;  Zhao, DG;  Deng, Y;  Jiang, DS;  Zhu, JJ;  Wang, H;  Liu, ZS;  Zhang, SM;  Zhang, BS;  Yang, H
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External Electric Field Manipulations on Structural Phase Transition of Vanadium Dioxide Nanoparticles and Its Application in Field Effect Transistor 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 卷号: 115, 期号: 47, 页码: 23558-23563
Authors:  Li WW (Li W. W.);  Zhu JJ (Zhu J. J.);  Liang JR (Liang J. R.);  Hu ZG (Hu Z. G.);  Liu J (Liu J.);  Chen HD (Chen H. D.);  Chu JH (Chu J. H.)
Adobe PDF(772Kb)  |  Favorite  |  View/Download:782/253  |  Submit date:2012/02/21
The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 12, 页码: 127306
Authors:  Le LC (Le Ling-Cong);  Zhao DG (Zhao De-Gang);  Wu LL (Wu Liang-Liang);  Deng Y (Deng Yi);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Zhang BS (Zhang Bao-Shun);  Yang H (Yang Hui)
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Growth and device characteristics of nano-folding InGaN/GaN multiple quantum well LED 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 7, 页码: 76104
Authors:  Chen GF;  Tan XD;  Wan WT;  Shen J;  Hao QY;  Tang CC;  Zhu JJ;  Liu ZS;  Zhao DG;  Zhang SM;  Zhu, JJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China, admat@hebut.edu.cn
Adobe PDF(520Kb)  |  Favorite  |  View/Download:917/290  |  Submit date:2012/02/06
Arrays  
纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
Adobe PDF(762Kb)  |  Favorite  |  View/Download:1127/511  |  Submit date:2012/07/17
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(311Kb)  |  Favorite  |  View/Download:1601/520  |  Submit date:2011/07/05
Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer