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大功率及高转换效率2.1μm GaInSb/AlGaAsSb量子阱激光器 期刊论文
红外与激光工程, 2016, 卷号: 45, 期号: 5, 页码: 66-70
Authors:  宋玉志;  宋甲坤;  张祖银;  李康文;  徐云;  宋国峰;  陈良惠
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Theoretical analyses on improved beam properties of GaSb-based 2.X-mu m quantum-well diode lasers with no degradation in laser parameters 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 8, 页码: 084208
Authors:  Wang YB (Wang Yong-Bin);  Xu Y (Xu Yun);  Song GF (Song Guo-Feng);  Chen LH (Chen Liang-Hui)
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Coupling coefficient calculation for GaSb-based quantum well distributed feedback lasers with laterally coupled gratings 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 卷号: 45, 期号: 50, 页码: 505109
Authors:  Wang YB (Wang, Y. B.);  Xu Y (Xu, Y.);  Zhang Y (Zhang, Y.);  Song GF (Song, G. F.);  Chen LH (Chen, L. H.)
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Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 25-30
Authors:  Zhu, JJ;  Fan, YM;  Zhang, H;  Lu, GJ;  Wang, H;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Zhang, SM;  Chen, GF;  Zhang, BS;  Yang, H
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Growth and device characteristics of nano-folding InGaN/GaN multiple quantum well LED 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 7, 页码: 76104
Authors:  Chen GF;  Tan XD;  Wan WT;  Shen J;  Hao QY;  Tang CC;  Zhu JJ;  Liu ZS;  Zhao DG;  Zhang SM;  Zhu, JJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China,
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Fabrication of biomimic GaAs subwavelength grating structures for broadband and angular-independent antireflection 期刊论文
MICROELECTRONIC ENGINEERING, 2011, 卷号: 88, 期号: 9, 页码: 2889-2893
Authors:  Chen X;  Fan ZC;  Xu Y;  Song GF;  Chen LH;  Chen, X (reprint author), Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China,;
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Interference Lithography  Photoresist Gratings  Profile  Light  Nanostructures  Reflection  Reduction  Array  Si  
Omnidirectional absorption enhancement in hybrid waveguide-plasmon system 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 26, 页码: 261101
Authors:  Zhang J;  Bai WL;  Cai LK;  Chen X;  Song GF;  Gan QQ;  Zhang, J (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China,;
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Arrays  Films  Light  
纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
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Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 6, 页码: Art. No. 067302
Authors:  Wang YB;  Xu Y;  Zhang Y;  Yu X;  Song GF;  Chen LH
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Inas/gasb Superlattices  P-doping Concentration  Electrical And Optical Properties  
具有梯度带隙势垒吸收层的光泵浦垂直外腔面发射激光器 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-17, 2010-08-12
Inventors:  黄祖炎;  宋国锋;  王 青;  韦 欣;  陈良惠
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