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增强型AlGaN/GaN HEMT器件工艺的研究进展 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 10, 页码: 771-777
Authors:  杜彦东;  韩伟华;  颜伟;  张严波;  熊莹;  张仁平;  杨富华
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锑化物HEMT器件研究进展 期刊论文
功能材料与器件学报, 2011, 卷号: 17, 期号: 1, 页码: 29-35
Authors:  李彦波;  刘超;  张杨;  曾一平
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Accurate determination of electronic transition energy of carbon nanotubes from the resonant behavior of radial breathing modes and their overtones 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 11, 页码: 7966-7973
Authors:  Zhang J (Zhang Jun);  Tan PH (Tan Ping-Heng);  Zhao WJ (Zhao Wei-Jie);  Tan, PH, Chinese Acad Sci, Inst Semicond, State Key Lab SupperLattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn
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Single Walled Carbon Nanotubes  Radial Breathing Modes  Resonant Raman Scattering  Electronic Transition Energy  Stokes-raman Scattering  Vibrational-modes  Graphite  Diameter  Spectra  
锑化物超晶格红外探测器的研究进展 期刊论文
固体电子学研究与进展, 2010, 卷号: 30, 期号: 1, 页码: 40864
Authors:  李彦波;  刘超;  张杨;  赵杰;  曾一平
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一种氮化物薄膜外延生长的方法 专利
专利类型: 发明, 申请日期: 2009-06-03, 公开日期: 3996
Inventors:  闫发旺;  高海永;  张 扬;  张会肖;  李晋闽;  曾一平;  王国宏 
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用于氮化物外延生长的纳米级图形衬底的制作方法 专利
专利类型: 发明, 申请日期: 2009-02-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  闫发旺;  高海永;  樊中朝;  李晋闽;  曾一平;  王国宏;  张会肖;  王军喜;  张扬
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一种利用图形化衬底提高GaN基LED发光效率的方法 专利
专利类型: 发明, 申请日期: 2009-01-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  闫发旺;  高永海;  张扬;  李晋闽;  曾一平;  王国宏;  张会肖
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A simple method to realize large-bandwidth and high-efficiency wavelength conversion in Si waveguide 会议论文
, Shanghai, PEOPLES R CHINA, 2009
Authors:  Jia LX (Jia Lianxi);  Geng MM (Geng Minming);  Zhang L (Zhang Lei);  Yang L (Yang Lin);  Chen P (Chen Ping);  Liu YL (Liu Yuliang)
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Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
Authors:  Zhang Z;  Zhang R;  Xie ZL;  Liu B;  Xiu XQ;  Li Y;  Fu DY;  Lu H;  Chen P;  Han P;  Zheng YD;  Tang CG;  Chen YH;  Wang ZG;  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Zhang Z Nanjing Univ Jiangsu Prov Key Lab Adv Photon & Elect Mat Nanjing 210093 Peoples R China. E-mail Address: rzhang@nju.edu.cn
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Inn  Dislocation  Carrier Origination  Localization  
厚度对MOCVD生长InN薄膜位错特性与光电性质的影响 期刊论文
物理学报, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
Authors:  张曾;  张荣;  谢自力;  刘斌;  修向前;  李弋;  傅德颐;  陆海;  陈鹏;  韩平;  郑有炓;  汤晨光;  陈涌海;  王占国
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