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ZnCl_2掺杂n型ZnSe的分子束外延生长 期刊论文
微电子学, 2012, 卷号: 42, 期号: 6, 页码: 881-884
Authors:  张家奇,杨秋旻,赵杰,崔利杰,刘超,曾一平
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低温缓冲层对MBE生长ZnTe材料性能的改善 期刊论文
半导体技术, 2012, 卷号: 37, 期号: 1, 页码: 37-41
Authors:  张家奇,赵杰,刘超,崔利杰,曾一平
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(Zn, Cd, Se, Te)光伏材料的MBE 生长及物性研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  赵杰
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新型高效太阳能电池研究进展 期刊论文
物理, 2011, 卷号: 40, 期号: 4, 页码: 233-240
Authors:  赵杰;  曾一平
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Ⅱ-Ⅵ族镉化物材料的MBE生长及器件应用进展 期刊论文
半导体光电, 2011, 卷号: 32, 期号: 1, 页码: 1-5,14
Authors:  赵杰;  刘超;  李彦波;  曾一平
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Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
Authors:  Zhao J (Zhao Jie);  Zeng YP (Zeng Yiping);  Liu C (Liu Chao);  Cui LJ (Cui Lijie);  Li YB (Li Yanbo);  Zhao, J, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, QingHua E Rd, Beijing 100083, Peoples R China. E-mail Address:
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Znte  Molecular Beam Epitaxy  Reflection High-energy Electron Diffraction  X-ray Diffraction  Atomic Force Microscopy  Vapor-phase Epitaxy  N-type Znte  Mbe Growth  100 Gaas  Znse  Layers  Surface  Temperature  Substrate  Epilayers  
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Authors:  Zhao J (Zhao Jie);  Zeng YP (Zeng Yiping);  Liu C (Liu Chao);  Li YB (Li Yanbo);  Zhao, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址:
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Reflection High-energy Electron Diffraction  Atomic Force Microscopy  Molecular Beam Epitaxy  Zinc Compounds  Semiconducting Ii-vi Materials  
锑化物超晶格红外探测器的研究进展 期刊论文
固体电子学研究与进展, 2010, 卷号: 30, 期号: 1, 页码: 40864
Authors:  李彦波;  刘超;  张杨;  赵杰;  曾一平
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PLD工艺制备高质量ZnO/Si异质外延薄膜 期刊论文
功能材料, 2009, 卷号: 40, 期号: 6, 页码: 956-958
Authors:  赵杰;  胡礼中;  王维维
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Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
Authors:  Zhao J;  Hu LZ;  Zhao, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(379Kb)  |  Favorite  |  View/Download:907/284  |  Submit date:2011/07/05
Zno  Pulsed Laser Deposition  X-ray Diffraction  Photoluminescence  Reflection High-energy Electron Diffraction  Pulsed-laser Deposition  Thin-films  Pld Technique  Growth  Sapphire  Temperature