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锑化物高电子迁移率晶体管的材料与器件研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  李彦波
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Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates 期刊论文
Applied Surface Science, 2012, 卷号: 258, 期号: 17, 页码: 6571-6575
Authors:  Li, Yanbo;  Zhang, Yang;  Zhang, Yuwei;  Wang, Baoqiang;  Zhu, Zhanping;  Zeng, Yiping
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锑化物HEMT器件研究进展 期刊论文
功能材料与器件学报, 2011, 卷号: 17, 期号: 1, 页码: 29-35
Authors:  李彦波;  刘超;  张杨;  曾一平
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Ⅱ-Ⅵ族镉化物材料的MBE生长及器件应用进展 期刊论文
半导体光电, 2011, 卷号: 32, 期号: 1, 页码: 1-5,14
Authors:  赵杰;  刘超;  李彦波;  曾一平
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Electron mobility in modulation-doped AlSb/InAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: Article no.73703
Authors:  Li YB;  Zhang Y;  Zeng YP;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. terahertzantenna@163.com;  ypzeng@semi.ac.cn
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Acoustic-phonon-scattering  Low-power Applications  Transport-properties  Interface Roughness  Inas/alsb Hemts  Heterostructures  Inas  Transistors  Gas  Layers  
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
Authors:  Zhao J (Zhao Jie);  Zeng YP (Zeng Yiping);  Liu C (Liu Chao);  Cui LJ (Cui Lijie);  Li YB (Li Yanbo);  Zhao, J, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, QingHua E Rd, Beijing 100083, Peoples R China. E-mail Address: jiezhao@semi.ac.cn
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Znte  Molecular Beam Epitaxy  Reflection High-energy Electron Diffraction  X-ray Diffraction  Atomic Force Microscopy  Vapor-phase Epitaxy  N-type Znte  Mbe Growth  100 Gaas  Znse  Layers  Surface  Temperature  Substrate  Epilayers  
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 4, 页码: Art. No. 044504
Authors:  Li YB (Li Yanbo);  Zhang Y (Zhang Yang);  Zeng YP (Zeng Yiping);  Li, YB, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: nkybli@163.com;  ypzeng@semi.ac.cn
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Inas/alsb Quantum-wells  Low-power Applications  Hemts  Modulation  Heterostructures  Technology  Channel  Voltage  Mass  
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Authors:  Zhao J (Zhao Jie);  Zeng YP (Zeng Yiping);  Liu C (Liu Chao);  Li YB (Li Yanbo);  Zhao, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: jiezhao_sub@163.com
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Reflection High-energy Electron Diffraction  Atomic Force Microscopy  Molecular Beam Epitaxy  Zinc Compounds  Semiconducting Ii-vi Materials  
锑化物超晶格红外探测器的研究进展 期刊论文
固体电子学研究与进展, 2010, 卷号: 30, 期号: 1, 页码: 40864
Authors:  李彦波;  刘超;  张杨;  赵杰;  曾一平
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锑化物高电子迁移率晶体管及其制造方法 专利
专利类型: 发明, 专利号: CN200910236705.2, 公开日期: 2011-08-31
Inventors:  李彦波;  张杨;  曾一平
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