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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  H. Yang;  Y. T. Zhang;  G. T. Du
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The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 16, 页码: 163708
Authors:  Li, X. J.;  Zhao, D. G.;  Jiang, D. S.;  Liu, Z. S.;  Chen, P.;  Zhu, J. J.;  Le, L. C.;  Yang, J.;  He, X. G.;  Zhang, S. M.;  Zhang, B. S.;  Liu, J. P.;  Yang, H.
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Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 11, 页码: 113105
Authors:  Chen P (Chen, P.);  Feng MX (Feng, M. X.);  Jiang DS (Jiang, D. S.);  Zhao DG (Zhao, D. G.);  Liu ZS (Liu, Z. S.);  Li L (Li, L.);  Wu LL (Wu, L. L.);  Le LC (Le, L. C.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
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Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 053104
Authors:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Wu LL (Wu, L. L.);  Li L (Li, L.);  Chen P (Chen, P.);  Liu ZS (Liu, Z. S.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
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Index-coupled surface porous grating distributed feedback quantum cascade laser 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 10, 页码: 103102
Authors:  Zhang JC (Zhang, J. C.);  Liu FQ (Liu, F. Q.);  Zhao LH (Zhao, L. H.);  Wang LJ (Wang, L. J.);  Yao DY (Yao, D. Y.);  Zhai SQ (Zhai, S. Q.);  Liu JQ (Liu, J. Q.);  Wang ZG (Wang, Z. G.)
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Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 11, 页码: 113509
Authors:  Shi K (Shi K.);  Zhang PF (Zhang P. F.);  Wei HY (Wei H. Y.);  Jiao CM (Jiao C. M.);  Jin P (Jin P.);  Liu XL (Liu X. L.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Wang ZG (Wang Z. G.)
Adobe PDF(571Kb)  |  Favorite  |  View/Download:1149/406  |  Submit date:2012/02/22
Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 4, 页码: Art.No.046101
Authors:  Li DY (Li D. Y.);  Huang YZ (Huang Y. Z.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Ye XJ (Ye X. J.);  Chong M (Chong M.);  Chen LH (Chen L. H.);  Yang H (Yang H.);  Liang JW (Liang J. W.);  Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, POB 912, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
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Linewidth Enhancement Factor  Wave-guide Laser  Gan Substrate  Index  Temperature  Gain