| Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer | |
| Chen P (Chen, P.); Feng MX (Feng, M. X.); Jiang DS (Jiang, D. S.); Zhao DG (Zhao, D. G.); Liu ZS (Liu, Z. S.); Li L (Li, L.); Wu LL (Wu, L. L.); Le LC (Le, L. C.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.) | |
| 2012 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| Volume | 112Issue:11Pages:113105 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-26 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23764 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Chen P ,Feng MX ,Jiang DS ,et al. Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer[J]. JOURNAL OF APPLIED PHYSICS,2012,112(11):113105. |
| APA | Chen P .,Feng MX .,Jiang DS .,Zhao DG .,Liu ZS .,...&Yang H .(2012).Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer.JOURNAL OF APPLIED PHYSICS,112(11),113105. |
| MLA | Chen P ,et al."Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer".JOURNAL OF APPLIED PHYSICS 112.11(2012):113105. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012014.pdf（1339KB） | 限制开放 | License | Application Full Text | |||
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