Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer | |
Chen P (Chen, P.); Feng MX (Feng, M. X.); Jiang DS (Jiang, D. S.); Zhao DG (Zhao, D. G.); Liu ZS (Liu, Z. S.); Li L (Li, L.); Wu LL (Wu, L. L.); Le LC (Le, L. C.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.) | |
2012 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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Volume | 112Issue:11Pages:113105 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-26 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23764 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Chen P ,Feng MX ,Jiang DS ,et al. Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer[J]. JOURNAL OF APPLIED PHYSICS,2012,112(11):113105. |
APA | Chen P .,Feng MX .,Jiang DS .,Zhao DG .,Liu ZS .,...&Yang H .(2012).Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer.JOURNAL OF APPLIED PHYSICS,112(11),113105. |
MLA | Chen P ,et al."Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer".JOURNAL OF APPLIED PHYSICS 112.11(2012):113105. |
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