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AlGaN/GaN异质结紫外探测器 期刊论文
红外与激光工程, 2007, 卷号: 36, 期号: 6, 页码: 917-919
Authors:  陈俊;  许金通;  李雪;  陈亮;  赵德刚;  李向阳
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非故意掺杂n型GaN的负持续光电导现象 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 6, 页码: 878-882
Authors:  苏志国;  许金通;  陈俊;  李向阳;  刘骥;  赵德刚
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Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 4, 页码: Art.No.041903
Authors:  Wang YJ;  Xu SJ;  Li Q;  Zhao DG;  Yang H;  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
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Photoluminescence  Luminescence  
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 8, 页码: Art.No.083123
Authors:  Xu SJ;  Li GQ;  Wang YJ;  Zhao Y;  Chen GH;  Zhao DG;  Zhu JJ;  Yang H;  Yu DP;  Wang JN;  Xu, SJ, Univ Hong Kong, Joint Lab New Mat, CAS, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
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Luminescence  Temperature  Model  
空间用紫外探测及AlGaN探测器的研究进展 期刊论文
激光与红外, 2006, 卷号: 36, 期号: 11, 页码: 1009-1012
Authors:  张燕;  龚海梅;  白云;  陈亮;  许金通;  汤英文;  游达;  赵德刚;  郭丽伟;  李向阳
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GaN基紫外探测器及其研究进展 期刊论文
红外与激光工程, 2006, 卷号: 35, 期号: 3, 页码: 276-280
Authors:  李向阳;  许金通;  汤英文;  李雪;  张燕;  龚海梅;  赵德刚;  杨辉
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立方相 Al_xGa_(1-x)N/GaAs(100)的MOVCD外延生长 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 2, 页码: 161-164
Authors:  冯志宏;  杨辉;  徐大鹏;  赵德刚;  王海;  段俐宏
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MOCVD growth of cubic GaN: Materials and devices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
Authors:  Yang H;  Zhang SM;  Xu DP;  Li SF;  Zhao DG;  Fu Y;  Sun YP;  Feng ZH;  Zheng LX;  Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
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Mocvd  Gan  Ingan  Cubic  Led  Chemical-vapor-deposition  Molecular-beam Epitaxy  Gallium Nitride  Phase Epitaxy  Ingan Films  Electroluminescence  Zincblende  Wurtzite  Mbe  
Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 6, 页码: 3762-3764
Authors:  Xu DP;  Wang YT;  Yang H;  Li SF;  Zhao DG;  Fu Y;  Zhang SM;  Wu RH;  Jia QJ;  Zheng WL;  Jiang XM;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Nitride Semiconductors  Stress  
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
Authors:  Xu DP;  Yang H;  Li JB;  Li SF;  Zhao DG;  Wang YT;  Sun XL;  Wu RH;  Xu DP Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond Beijing 100864 Peoples R China.
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Cubic Gan  Buffer Layer  Atomic Force Microscopy  Reflection High-energy Electron Diffraction  Movpe