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一种生长氧化锌薄膜的装置及方法 专利
专利类型: 发明, 申请日期: 2008-07-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  杨少延;  刘祥林;  赵凤瑷;  焦春美;  董向芸;  张晓沛;  范海波;  魏宏源;  张攀峰;  王占国
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Growth temperature dependences of InN films grown by MOCVD 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 3149-3152 Part 2
Authors:  Yang, CB;  Wang, XL;  Xiao, HL;  Zhang, XB;  Hua, GX;  Ran, JX;  Wang, CM;  Li, JP;  Li, JM;  Wang, ZG;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.cn
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Inn  Mocvd  Mobility  
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Zhao, YW;  Zhang, F;  Zhang, R;  Dong, ZY;  Wei, XC;  Zeng, YP;  Li, JM;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Zinc Oxide  Defect  Vacancy  
Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Huang BJ;  Xu Zhang;  Zan Dong;  Wei Wang;  Chen HD;  Huang, BJ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
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Silicon  
Characterization of Phosphorus Diffused ZnO Bulk Single Crystals 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1674-1678
Authors:  Zhang Rui;  Zhang Fan;  Zhao Youwen;  Dong Zhiyuan;  Yang Jun
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掺Sb的ZnO单晶的缺陷和性质研究 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 10, 页码: 1988-1991
Authors:  张瑞;  张方;  赵有文;  董志远;  杨俊
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基于DFB激光器的光学微波信号的产生 期刊论文
物理学报, 2008, 卷号: 57, 期号: 7, 页码: 4558-4563
Authors:  谢红云;  金冬月;  何莉剑;  张蔚;  王路;  张万荣;  王圩
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铟掺杂ZnO体单晶的生长及其性质 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 8, 页码: 1540-1543
Authors:  张璠;  赵有文;  董志远;  张瑞;  杨俊
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