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In0.53Ga0.47As/In0.52Al0.48As 雪崩光电二极管的数值模拟研究 期刊论文
红外与激光工程, 2016, 卷号: 45, 期号: 5, 页码: 98-102
Authors:  李慧梅;  胡晓斌;  白霖;  李晓敏;  于海龙;  徐云;  宋国峰
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Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 68, 期号: 1, 页码: 10105
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Yan, JD;  Peng, EC;  Kang, H;  Wang, ZG;  Hou, X
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Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 66, 期号: 2, 页码: 20101
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Hou, X;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Peng, EC;  Kang, H;  Wang, ZG
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Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 5, 页码: 054502
Authors:  Yan, JD;  Wang, XL;  Wang, Q;  Qu, SQ;  Xiao, HL;  Peng, EC;  Kang, H;  Wang, CM;  Feng, C;  Yin, HB;  Jiang, LJ;  Li, BQ;  Wang, ZG;  Hou, X
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Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 卷号: 605, 页码: 113-117
Authors:  Li, W;  Wang, XL;  Qu, SQ;  Wang, Q;  Xiao, HL;  Wang, CM;  Peng, EC;  Hou, X;  Wang, ZG
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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 6, 页码: 068502
Authors:  Kang, H;  Wang, Q;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Wang, XL;  Wang, ZG;  Hou, X
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Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 卷号: 523, 页码: 88-93
Authors:  Ding, JQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Yin, HB;  Chen, H;  Feng, C;  Jiang, LJ
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Raman study on dislocation in high Al content AlxGa1-xN 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2012, 卷号: 58, 期号: 1, 页码: 10102
Authors:  Pan, X;  Wang, XL;  Xiao, HL;  Wang, CM;  Feng, C;  Jiang, LJ;  Yin, H;  Chen, H
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A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 18, 页码: 182102
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Chen H (Chen, Hong);  Bi Y (Bi, Yang);  Deng QW (Deng, Qinwen);  Zhang JW (Zhang, Jingwen);  Hou X (Hou, Xun)
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Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文
PHYSICA B-CONDENSED MATTER, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Yin HB (Yin, Haibo);  Chen H (Chen, Hong);  Feng C (Feng, Chun);  Jiang LJ (Jiang, Lijuan)
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