SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Characterization of Phosphorus Diffused ZnO Bulk Single Crystals
Zhang Rui; Zhang Fan; Zhao Youwen; Dong Zhiyuan; Yang Jun
2008
Source Publication半导体学报
Volume29Issue:9Pages:1674-1678
AbstractPhosphorus was diffused into CVT grown undoped ZnO bulk single crystals at 550 and 800℃ in a closed quartz tube. The P-diffused ZnO single crystals were characterized by the Hall effect, X-ray photoelectron spectroscopy (XPS), photoluminescence spectroscopy (PL), and Raman scattering. The P-diffused ZnO single crystals are n-type and have higher free electron concentration than undoped ZnO, especially for the sample diffused at 800℃. The PL measurement reveals defect related visible broad emissions in the range of 420-550nm in the P-diffused ZnO samples. The XPS result suggests that most of the P atoms substitute in the Zn site after they diffuse into the ZnO single crystal at 550℃ ,while the P atom seems to occupy the O site in the ZnO samples diffused at 800℃. A high concentration of shallow donor defect forms in the P-diffused ZnO,resulting in an apparent increase of free electron concentration.
metadata_83material science centre, institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目(批准号
Indexed ByCSCD
Language英语
CSCD IDCSCD:3399078
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15959
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhang Rui,Zhang Fan,Zhao Youwen,et al. Characterization of Phosphorus Diffused ZnO Bulk Single Crystals[J]. 半导体学报,2008,29(9):1674-1678.
APA Zhang Rui,Zhang Fan,Zhao Youwen,Dong Zhiyuan,&Yang Jun.(2008).Characterization of Phosphorus Diffused ZnO Bulk Single Crystals.半导体学报,29(9),1674-1678.
MLA Zhang Rui,et al."Characterization of Phosphorus Diffused ZnO Bulk Single Crystals".半导体学报 29.9(2008):1674-1678.
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