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Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472
Authors:  Yang T;  Nishioka M;  Arakawa Y;  Yang T Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: tyang@semi.ac.cn
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Metalorganic Chemical Vapor Deposition  Quantum Dots  Inas  Gaas  Laser Diodes  
Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 309, 期号: 2, 页码: 140-144
Authors:  Lin, T;  Zheng, K;  Wang, CL;  Ma, XY;  Lin, T, Xian Univ Technol, Dept Elect Engn, Xian 710048, Peoples R China. 电子邮箱地址: lintao@semi.ac.cn
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Diffusion  Metalorganic Vapor Phase Epitaxy  Semiconducting Iii-v Materials  Laser Diodes  
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Authors:  Wu DH;  Niu ZC;  Zhang SY;  Ni HQ;  He ZH;  Sun Z;  Han Q;  Wu RH;  Wu, DH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. E-mail: wudonghai@red.semi.ac.cn;  zcniu@red.semi.ac.cn
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Photoluminescence  Molecular Beam Epitaxy  Quantum Wells  Nitrides  Semiconducting Iii-v Materials  Improved Luminescence Efficiency  Laser-diodes  Temperature  Surfactant  Emission  Nitrogen  Origin  
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 288, 期号: 1, 页码: 40529
Authors:  Jiang DS;  Qu YH;  Ni HQ;  Wu DH;  Xu YQ;  Niu ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iii-v Materials  Mu-m  Lasers  Temperature  Surfactant  Nm  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 3-4, 页码: 336-341
Authors:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang, DS, CAS, Inst Semicond, SKLSM, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  
The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344
Authors:  Bian LF;  Jiang DS;  Lu SL;  Huang JS;  Chang K;  Li LH;  Harmand JC;  Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Quantum Wells  Gainnas  Strain-compensated Ganas Layers  Molecular-beam Epitaxy  Photoluminescence  Lasers  Threshold  
Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 236, 期号: 4, 页码: 516-522
Authors:  Wei X;  Wang GH;  Zhang GZ;  Zhu XP;  Ma XY;  Chen LH;  Wei X,Chinese Acad Sci,Inst Semicond,Natl Engn Res Ctr Optoelect Devices,POB 912,Beijing 100083,Peoples R China.
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High Resolution X-ray Diffraction  Precursor  Metalorganic Chemical Vapor Depositions  Gallium Compounds  Laser-diodes  Solar-cells  Band-gap  Gainnas  Dimethylhydrazine  Growth  Pyrolysis  Epitaxy  
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 241, 期号: 3, 页码: 304-308
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Li DB;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Atomic Force Microscopy  Low Dimensional Structures  Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diodes  Temperature-dependence  Threshold Current  Mu-m  Lasers  
Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358
Authors:  Jia R;  Jiang DS;  Liu HY;  Wei YQ;  Xu B;  Wang ZG;  Jia R,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Molecular Beam Epitaxy  Semiconductor Iii-v Materials  Laser Diodes  1.3 Mu-m  Continuous-wave Operation  Temperature-dependence  Lasing Characteristics  1.3-mu-m  Photoluminescence  Gain  
Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 225, 期号: 1, 页码: 45-49
Authors:  Fu Y;  Yang H;  Zhao DG;  Zheng XH;  Li SF;  Sun YP;  Feng ZH;  Wang YT;  Duan LH;  Fu Y,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Photoluminescence  Sem  Epitaxial Lateral Overgrowth  Metalorganic Chemical Vapor Deposition  Cubic Gan  Phase Epitaxy  Selective Growth  Laser-diodes  Layers