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An Accurate and Fast Behavioral Model for PLL Frequency Synthesizer Phase Noise/Spurs Prediction 会议论文
PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE, San Jose, CA, 2009
作者:  Yan XZ (Yan Xiaozhou);  Kuang XF (Kuang Xiaofei);  Wu NJ (Wu Nanjian);  Yan, XZ, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail Address: nanjian@red.semi.ac.cn
Adobe PDF(2055Kb)  |  收藏  |  浏览/下载：2135/730  |  提交时间：2010/04/13
Noise  
Characteristics of triangle and square InP/InGaAsP microlasers 会议论文
ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, Athens, GREECE, JUN 22-26, 2008
作者:  Huang YZ;  Wang SJ;  Che KJ;  Hu YH;  Du Y;  Yu LJ;  Huang, YZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(271Kb)  |  收藏  |  浏览/下载：1556/252  |  提交时间：2010/03/09
Semiconductor Lasers  
Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Tang, CG;  Chen, YH;  Liu, Y;  Zhang, RQ;  Liu, XL;  Wang, ZG;  Zhang, R;  Zhang, Z;  Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)  |  收藏  |  浏览/下载：1879/374  |  提交时间：2010/03/09
Quantum-wells  Spin  
Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Wang, L;  Zhao, LJ;  Chen, WX;  Pan, JQ;  Zhou, F;  Zhu, HL;  Wang, W;  Wang, L, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(737Kb)  |  收藏  |  浏览/下载：1640/408  |  提交时间：2010/03/09
Photonic Integrated Circuit  Y-branch  Superluminescent Diode  Bundle Integrated Guide  Far Field Pattern  Reactive Ion Etching  
Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Zhao LJ;  Zhang J;  Wang L;  Cheng YB;  Pan JQ;  Liu HB;  Zhu HL;  Zhou F;  Bian J;  Wang BJ;  Zhu NH;  Wei W;  Zhao, LJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(375Kb)  |  收藏  |  浏览/下载：2263/579  |  提交时间：2010/03/09
Tunable Lasers  
Experimental investigation of slow light phenomenon in photonic crystal waveguide line defect laser 会议论文
PROCEEDINGS OF THE 2008 INTERNATIONAL WORKSHOP ON METAMATERIALS, Nanjing, PEOPLES R CHINA, NOV 09-12, 2008
作者:  Xing MX;  Ren G;  Chen W;  Zhou WJ;  Wang HL;  Chen LH;  Zheng WH;  Xing, MX, Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China.
Adobe PDF(750Kb)  |  收藏  |  浏览/下载：1284/273  |  提交时间：2010/03/09
Mode  
Kinetic Monte Carlo simulation of semiconductor quantum dot growth 会议论文
Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA, Beijing, PEOPLES R CHINA, JUN 09-11, 2005
作者:  Zhao C;  Chen YH;  Sun J;  Lei W;  Cui CX;  Yu LK;  Li K;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(3368Kb)  |  收藏  |  浏览/下载：1609/327  |  提交时间：2010/03/29
Monte Carlo Simulation  
Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES II, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:  Cheng YB;  Pan JQ;  Zhou F;  Wang BJ;  Zhu HL;  Zhao LJ;  Wang W;  Cheng, YB, Chinese Acad Sci, Inst Semicond, State Key lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(486Kb)  |  收藏  |  浏览/下载：1398/356  |  提交时间：2010/03/09
Butt Joint  
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载：1564/264  |  提交时间：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer  
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1492/372  |  提交时间：2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes